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BAT54LT1G

Description
DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 800mV @ 100mA
CategoryDiscrete semiconductor    diode   
File Size73KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BAT54LT1G Overview

DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 800mV @ 100mA

BAT54LT1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeSOT-23
package instructionR-PDSO-G3
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Samacsys DescriptionNULL
applicationFAST RECOVERY
Minimum breakdown voltage30 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.8 V
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current0.6 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse current2 µA
Maximum reverse recovery time0.005 µs
Reverse test voltage25 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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