MMBT3904L, SMMBT3904L
General Purpose Transistor
NPN Silicon
Features
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Collector Current − Peak (Note 3)
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
Value
40
60
6.0
200
900
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
1
2
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
mW
mW/°C
°C/W
°C
556
mW
mW/°C
°C/W
Max
Unit
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COLLECTOR
3
1
BASE
2
EMITTER
3
SOT−23 (TO−236)
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2)
@T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
MARKING DIAGRAM
1AM M
G
G
1
1AM = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
3. Reference SOA curve.
ORDERING INFORMATION
Device
MMBT3904LT1G
SMMBT3904LT1G
MMBT3904LT3G
SMMBT3904LT3G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3000 / Tape &
Reel
10,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
October, 2016 − Rev. 13
Publication Order Number:
MMBT3904LT1/D
MMBT3904L, SMMBT3904L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (I
C
= 1.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage (I
C
= 10
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage (I
E
= 10
mAdc,
I
C
= 0)
Base Cutoff Current (V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
Collector Cutoff Current (V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
ON CHARACTERISTICS
(Note 4)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
Base −Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance (V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Small −Signal Current Gain (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Output Admittance (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Noise Figure (V
CE
= 5.0 Vdc, I
C
= 100
mAdc,
R
S
= 1.0 k ohms, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= 3.0 Vdc, V
BE
= − 0.5 Vdc,
I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
(V
CC
= 3.0 Vdc,
I
C
= 10 mAdc, I
B1
= I
B2
= 1.0 mAdc)
t
d
t
r
t
s
t
f
−
−
−
−
35
35
200
50
ns
ns
f
T
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
NF
300
−
−
1.0
0.5
100
1.0
−
−
4.0
8.0
10
8.0
400
40
5.0
MHz
pF
pF
kW
X 10
− 4
−
mmhos
dB
H
FE
40
70
100
60
30
V
CE(sat)
−
−
V
BE(sat)
0.65
−
0.85
0.95
0.2
0.3
Vdc
−
−
300
−
−
Vdc
−
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
40
60
6.0
−
−
−
−
−
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
Symbol
Min
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 k
275
10 < t
1
< 500
ms
DUTY CYCLE = 2%
t
1
+3 V
+10.9 V
275
10 k
0
- 0.5 V
< 1 ns
C
S
< 4 pF*
- 9.1 V′
* Total shunt capacitance of test jig and connectors
< 1 ns
1N916
C
S
< 4 pF*
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
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2
MMBT3904L, SMMBT3904L
TYPICAL TRANSIENT CHARACTERISTICS
T
J
= 25°C
T
J
= 125°C
10
7.0
CAPACITANCE (pF)
Q, CHARGE (pC)
5.0
C
ibo
3.0
2.0
C
obo
5000
3000
2000
1000
700
500
300
200
100
70
50
Q
T
Q
A
V
CC
= 40 V
I
C
/I
B
= 10
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Capacitance
500
300
200
100
70
50
30
20
10
7
5
t
d
@ V
OB
= 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
2.0 V
50 70 100
200
40 V
15 V
10
7
5
I
C
/I
B
= 10
500
300
200
t r, RISE TIME (ns)
100
70
50
30
20
Figure 4. Charge Data
V
CC
= 40 V
I
C
/I
B
= 10
TIME (ns)
t
r
@ V
CC
= 3.0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time
500
300
200
t s, STORAGE TIME (ns)
′
100
70
50
30
20
10
7
5
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 20
I
C
/I
B
= 10
500
300
200
Figure 6. Rise Time
t′
s
= t
s
-
1
/
8
t
f
I
B1
= I
B2
t f , FALL TIME (ns)
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
100
70
50
30
20
10
7
5
I
C
/I
B
= 10
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
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3
MMBT3904L, SMMBT3904L
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= 5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
12
10
NF, NOISE FIGURE (dB)
8
6
4
2
0
0.1
SOURCE RESISTANCE = 500
W
I
C
= 100
mA
0.2
0.4
1.0
2.0
4.0
10
20
40
100
SOURCE RESISTANCE = 200
W
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200
W
I
C
= 0.5 mA
SOURCE RESISTANCE = 1.0 k
I
C
= 50
mA
14
f = 1.0 kHz
12
10
8
6
4
2
0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
I
C
= 100
mA
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50
mA
f, FREQUENCY (kHz)
R
S
, SOURCE RESISTANCE (k OHMS)
Figure 9.
Figure 10.
h PARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25°C)
300
hoe, OUTPUT ADMITTANCE (
m
mhos)
5.0
10
100
50
h fe , CURRENT GAIN
200
20
10
5
100
70
50
2
1
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
Figure 11. Current Gain
20
h ie , INPUT IMPEDANCE (k OHMS)
10
5.0
10
7.0
5.0
3.0
2.0
Figure 12. Output Admittance
2.0
1.0
0.5
h re , VOLTAGE FEEDBACK RATIO (X 10
-4
)
5.0
10
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
0.2
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
Figure 13. Input Impedance
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4
Figure 14. Voltage Feedback Ratio
MMBT3904L, SMMBT3904L
TYPICAL STATIC CHARACTERISTICS
1000
T
J
= +150°C
h FE, DC CURRENT GAIN
+25°C
100
- 55°C
V
CE
= 1.0 V
10
1
0.1
1.0
10
I
C
, COLLECTOR CURRENT (mA)
100
1000
Figure 15. DC Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
0.8
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I
B
, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
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