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PT4953

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 5.3A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 63mΩ @ 4.5A, 10V Maximum power dissipation ( Ta=25°C): 2.5W Type: Dual P-channel P-channel-30V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size475KB,3 Pages
ManufacturerhenZhen Puolop Electronics co.,LTD.
Websitehttp://www.puolop.com/
Shenzhen Dipu Electronics Co., Ltd. is one of the earliest leading design and sales companies in China engaged in low-dropout voltage regulator circuits (LDO), MOS tubes, power management ICs and power semiconductor devices. It specializes in the design, production and sales of various power management ICs and power semiconductor devices. Since its establishment, Dipu has developed rapidly, and its products have covered power management ICs (lithium battery charging IC/LDO IC/low voltage detection (reset) IC/DC-DC boost & buck IC/white light backlight IC/voltage reference source IC/voltage regulator IC/DC-DC general conversion IC, etc.), MOS tubes (low voltage MOS/medium voltage high current MOS/high voltage MOS), IGBT, EEPROM IC, audio amplifier IC, clock calendar IC, LED driver IC, high-voltage switch transistors and many other types of hundreds of models. "Quality first, customer first" is not only the business purpose of Dipu, but also the basis for Dipu's continuous and rapid development. We attach great importance to the opinions of customers and try our best to meet customer requirements from beginning to end. We have always believed that quality is the first responsibility of all our colleagues, and we have always been proud of Dipu's strict quality management system.
Download Datasheet Parametric View All

PT4953 Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 5.3A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 63mΩ @ 4.5A, 10V Maximum power dissipation ( Ta=25°C): 2.5W Type: Dual P-channel P-channel-30V

PT4953 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C5.3A
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance63mΩ @ 4.5A,10V
Maximum power dissipation (Ta=25°C)2.5W
typeDouble P channel

PT4953 Preview

Download Datasheet
PT4953
-30V P-Channel Enhancement Mode MOSFET
VDS= -30V
RDS(ON), Vgs@-10V, Ids@-4.5A = 63m
RDS(ON), Vgs@-4.5V, Ids@-3.6A =
90mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Improved Shoot-Through FOM
Package Dimensions
D1
8
D1
7
D2
6
D2
5
1
S1
2
G1
3
S2
4
G2
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
5.80
4.80
3.80
0.40
0.17
6.20
5.00
4.00
1.27
0.25
REF.
M
H
L
J
K
G
Millimeter
Min.
Max.
0.10
0.25
0.31
0.51
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (t
10s)
Pulsed Drain Current
1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted)
2)
Notes
1)
Pulse width limited by maximum junction temperature.
2)
Surface Mounted on FR4 Board, t
v
5 sec.
Symbol
Limit
Unit
V
DS
V
GS
I
D
I
DM
TA = 25
o
C
TA = 75
o
C
P
D
T
J
, T
stg
R
θ
JA
-30
± 20
-5.3
-20
2.5
1.2
-55 to 150
62.5
o
V
A
W
o
C
C/W
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