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SST25VF512A-33-4I-SAE

Categorystorage    storage   
File Size281KB,28 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
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SST25VF512A-33-4I-SAE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOIC
package instructionSOP, SOP8,.25
Contacts8
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Factory Lead Time16 weeks
Maximum clock frequency (fCLK)33 MHz
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G8
JESD-609 codee3
length4.9 mm
memory density524288 bit
Memory IC TypeFLASH
memory width1
Humidity sensitivity level3
Number of functions1
Number of terminals8
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX1
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
power supply3/3.3 V
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height1.75 mm
Serial bus typeSPI
Maximum standby current0.000015 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
typeNOR TYPE
width3.9 mm
write protectHARDWARE/SOFTWARE
Base Number Matches1
512 Kbit SPI Serial Flash
A Microchip Technology Company
SST25VF512A
Data Sheet
SST’s serial flash family features a four-wire, SPI-compatible interface that allows
for a low pin-count package occupying less board space and ultimately lowering
total system costs. SST25VF512A SPI serial flash memory is manufactured with
SST’s proprietary, high-performance CMOS SuperFlash technology. The split-
gate cell design and thick-oxide tunneling injector attain better reliability and man-
ufacturability compared with alternate approaches.
Features
• Single 2.7-3.6V Read and Write Operations
• Serial Interface Architecture
– SPI Compatible: Mode 0 and Mode 3
• End-of-Write Detection
– Software Status
• Hold Pin (HOLD#)
– Suspends a serial sequence to the memory
without deselecting the device
• 33 MHz Max Clock Frequency
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Write Protection (WP#)
– Enables/Disables the Lock-Down function of the status
register
• Low Power Consumption:
– Active Read Current: 7 mA (typical)
– Standby Current: 8 µA (typical)
• Software Write Protection
– Write protection through Block-Protection bits in status
register
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
• Temperature Range
– Commercial: 0°C to +70°C
– Industrial: -40°C to +85°C
– Extended: -20°C to +85°C
• Fast Erase and Byte-Program:
– Chip-Erase Time: 70 ms (typical)
– Sector- or Block-Erase Time: 18 ms (typical)
– Byte-Program Time: 14 µs (typical)
• Packages Available
– 8-lead SOIC 150 mil body width
– 8-contact WSON (5mm x 6mm)
• Auto Address Increment (AAI) Programming
– Decrease total chip programming time over Byte-Pro-
gram operations
• All non-Pb (lead-free) devices are RoHS compliant
©2011 Silicon Storage Technology, Inc.
www.microchip.com
DS25090A
10/11

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