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KTA1666-Y-RTF/P

Description
Rated power: 500mW Collector current Ic: 2A Collector-emitter breakdown voltage Vce: 50V Transistor type: PNP PNP,-50V,-2A
CategoryDiscrete semiconductor    triode   
File Size86KB,3 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
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KTA1666-Y-RTF/P Overview

Rated power: 500mW Collector current Ic: 2A Collector-emitter breakdown voltage Vce: 50V Transistor type: PNP PNP,-50V,-2A

KTA1666-Y-RTF/P Parametric

Parameter NameAttribute value
rated power500mW
Collector current Ic2A
Collector-emitter breakdown voltage Vce50V
Transistor typePNP

KTA1666-Y-RTF/P Related Products

KTA1666-Y-RTF/P KTA1666Y KTA1666Y-RTF/P-SOT89 KTA1666O
Description Rated power: 500mW Collector current Ic: 2A Collector-emitter breakdown voltage Vce: 50V Transistor type: PNP PNP,-50V,-2A Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN
Maker - KEC KEC KEC
package instruction - SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code - unknown unknown unknown
ECCN code - EAR99 EAR99 EAR99
Shell connection - COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) - 2 A 2 A 2 A
Collector-emitter maximum voltage - 50 V 50 V 50 V
Configuration - SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) - 120 120 70
JESD-30 code - R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
Number of components - 1 1 1
Number of terminals - 3 3 3
Maximum operating temperature - 150 °C 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type - PNP PNP PNP
surface mount - YES YES YES
Terminal form - FLAT FLAT FLAT
Terminal location - SINGLE SINGLE SINGLE
transistor applications - SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON
Nominal transition frequency (fT) - 120 MHz 120 MHz 120 MHz
Base Number Matches - 1 1 1

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