KTA1666Y-RTF/P-SOT89 datasheet, PDF

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KTA1666Y-RTF/P-SOT89: DescriptionSmall Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size86KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTA1666Y-RTF/P-SOT89 Overview

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN

KTA1666Y-RTF/P-SOT89 Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	120 MHz
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

POWER AMPLIFIER APPLICATIONS.

POWER SWITCHING APPLICATIONS.

FEATURES

Low Saturation Voltage

: V

CE(sat)

=-0.5V(Max.) (I

C

=-1A)

High Speed Switching Time : t

stg

=1.0 S(Typ.)

P

C

=1

2W (Mounted on Ceramic Substrate)

D

K

F

D

A

H

KTA1666

EPITAXIAL PLANAR PNP TRANSISTOR

C

G

J

B

E

Small Flat Package.

Complementary to KTC4379.

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

)

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

B

P

C

P

C

*

T

j

T

stg

RATING

-50

-5

-2

-0.4

500

1

150

-55

150

UNIT

V

A

mW

W

1

2

3

DIM

A

B

C

D

E

F

G

H

J

K

MILLIMETERS

4.70 MAX

_

2.50 + 0.20

1.70 MAX

0.45+0.15/-0.10

4.25 MAX

_

1.50 + 0.10

0.40 TYP

1.75 MAX

0.75 MIN

0.5+0.10/-0.05

1. BASE

2. COLLECTOR (HEAT SINK)

3. EMITTER

SOT-89

Marking

h

FE

Rank

Lot No.

Type Name

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Turn-on Time

Switching

Time

Storage Time

Fall Time

Note 1 : Pulse width 300 S, Duty Cycle 2%

Note 2 : h

FE

(1) Classification

0:70 140,

Y:120

240

SYMBOL

I

CBO

I

EBO

V

(BR)CEO

h

FE

(1) (Note2)

h

FE

(2)

V

CE(sat)

V

BE(sat)

f

T

C

ob

t

on

t

stg

20µsec

TEST CONDITION

V

CB

=-50V, I

E

=0

V

EB

=-5V, I

C

=0

I

C

=-10mA, I

B

=0

V

CE

=-2V, I

C

=-0.5A (Note 1)

V

CE

=-2V, I

C

=-1.5A (Note 1)

I

C

=-1A, I

B

=-0.05A (Note 1)

I

C

=-1A, I

B

=-0.05A (Note 1)

V

CE

=-2V, I

C

=-0.5A

V

CB

=-10V, I

E

=0, f=1MHz

I

B2

0

I

B1

INPUT

I

B2

30Ω

I

B1

-I

B1

=I

B2

=0.05A

DUTY CYCLE < 1%

=

OUTPUT

MIN.

-

-50

70

40

-

W

TYP.

-

120

40

0.1

1.0

0.1

MAX.

-0.1

-

240

-

-0.5

-1.2

-

S

V

MHz

pF

P

C

* : KTA1666 mounted on ceramic substrate (250mm

2

x0.8t)

UNIT

A

V

t

f

V

CC

=-30V

1998. 6. 15

Revision No : 2

1/3

KTA1666Y-RTF/P-SOT89 Related Products

	KTA1666Y-RTF/P-SOT89	KTA1666Y	KTA1666O	KTA1666-Y-RTF/P
Description	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN	Rated power: 500mW Collector current Ic: 2A Collector-emitter breakdown voltage Vce: 50V Transistor type: PNP PNP,-50V,-2A
Maker	KEC	KEC	KEC	-
package instruction	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	-
Reach Compliance Code	unknown	unknown	unknown	-
ECCN code	EAR99	EAR99	EAR99	-
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	-
Maximum collector current (IC)	2 A	2 A	2 A	-
Collector-emitter maximum voltage	50 V	50 V	50 V	-
Configuration	SINGLE	SINGLE	SINGLE	-
Minimum DC current gain (hFE)	120	120	70	-
JESD-30 code	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	-
Number of components	1	1	1	-
Number of terminals	3	3	3	-
Maximum operating temperature	150 °C	150 °C	150 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-
Polarity/channel type	PNP	PNP	PNP	-
surface mount	YES	YES	YES	-
Terminal form	FLAT	FLAT	FLAT	-
Terminal location	SINGLE	SINGLE	SINGLE	-
transistor applications	SWITCHING	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	SILICON	-
Nominal transition frequency (fT)	120 MHz	120 MHz	120 MHz	-
Base Number Matches	1	1	1	-

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