IPD060N03LG datasheet, PDF - EEWORLD Datasheet

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IPD060N03LG: DescriptionDrain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 50A Gate-source threshold voltage: 2.2V @ 250uA Drain-source on-resistance: 6mΩ @ 30A, 10V Maximum power dissipation (Ta =25°C): 56W Type: N channel N channel, 30V, 50A, 5mΩ@10V; CategoryDiscrete semiconductor The transistor; File Size521KB，12 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IPD060N03LG Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 50A Gate-source threshold voltage: 2.2V @ 250uA Drain-source on-resistance: 6mΩ @ 30A, 10V Maximum power dissipation (Ta =25°C): 56W Type: N channel N channel, 30V, 50A, 5mΩ@10V

IPD060N03LG Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	TO-252
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Other features	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	60 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	50 A
Maximum drain current (ID)	50 A
Maximum drain-source on-resistance	0.009 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	56 W
Maximum pulsed drain current (IDM)	350 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

IPD060N03LG Related Products

	IPD060N03LG	IPD060N03L G
Description	Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 50A Gate-source threshold voltage: 2.2V @ 250uA Drain-source on-resistance: 6mΩ @ 30A, 10V Maximum power dissipation (Ta =25°C): 56W Type: N channel N channel, 30V, 50A, 5mΩ@10V	mosfet N-CH 30v 50a

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