BSP320SH6327XTSA1 datasheet, PDF

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BSP320SH6327XTSA1: DescriptionDrain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 2.9A(Tj) Gate-source threshold voltage: 4V @ 20uA Drain-source on-resistance: 120mΩ @ 2.9A, 10V Maximum power Dissipation (Ta=25°C): 1.8W Type: N-channel N-channel, 60V, 2.9A, 120mΩ@10V; CategoryDiscrete semiconductor The transistor; File Size488KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSP320SH6327XTSA1 Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 2.9A(Tj) Gate-source threshold voltage: 4V @ 20uA Drain-source on-resistance: 120mΩ @ 2.9A, 10V Maximum power Dissipation (Ta=25°C): 1.8W Type: N-channel N-channel, 60V, 2.9A, 120mΩ@10V

BSP320SH6327XTSA1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	60 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	2.9 A
Maximum drain current (ID)	2.9 A
Maximum drain-source on-resistance	0.12 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1.8 W
Maximum pulsed drain current (IDM)	11.6 A
Guideline	AEC-Q101
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

BSP320SH6327XTSA1 Related Products

	BSP320SH6327XTSA1	BSP320S	BSP320S E6327	BSP320S E6433	BSP320SH6327	BSP320SH6433
Description	Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 2.9A(Tj) Gate-source threshold voltage: 4V @ 20uA Drain-source on-resistance: 120mΩ @ 2.9A, 10V Maximum power Dissipation (Ta=25°C): 1.8W Type: N-channel N-channel, 60V, 2.9A, 120mΩ@10V	SIPMOS Small-Signal-Transistor	MOSFET N-CH 60V 2.9A SOT-223	MOSFET N-CH 60V 2.9A SOT-223	Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4	Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Is it Rohs certified?	conform to	conform to	-	-	conform to	conform to
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	-	-	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	compliant	compli	-	-	compliant	compliant
ECCN code	EAR99	EAR99	-	-	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	60 mJ	60 mJ	-	-	60 mJ	60 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	-	-	60 V	60 V
Maximum drain current (ID)	2.9 A	2.9 A	-	-	2.9 A	2.9 A
Maximum drain-source on-resistance	0.12 Ω	0.12 Ω	-	-	0.12 Ω	0.12 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4	R-PDSO-G4	-	-	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	-	-	1	1
Number of terminals	4	4	-	-	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	-	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	-	-	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	-	-	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	11.6 A	11.6 A	-	-	11.6 A	11.6 A
surface mount	YES	YES	-	-	YES	YES
Terminal form	GULL WING	GULL WING	-	-	GULL WING	GULL WING
Terminal location	DUAL	DUAL	-	-	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	-	-	SILICON	SILICON
Base Number Matches	1	1	-	-	1	1

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