MOSFET N-CH 60V 2.9A SOT-223
| Parameter Name | Attribute value |
| FET type | N channel |
| technology | MOSFET (metal oxide) |
| Drain-source voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) at 25°C | 2.9A（Ta） |
| Drive voltage (maximum Rds On, minimum Rds On) | 10V |
| Rds On (maximum value) when different Id, Vgs | 120 milliohms @ 2.9A, 10V |
| Vgs (th) (maximum value) when different Id | 4V @ 20µA |
| Gate charge (Qg) at different Vgs (maximum value) | 12nC @ 10V |
| Vgs (maximum value) | ±20V |
| Input capacitance (Ciss) at different Vds (maximum value) | 340pF @ 25V |
| FET function | - |
| Power dissipation (maximum) | 1.8W（Ta） |
| Operating temperature | -55°C ~ 150°C（TJ） |
| Installation type | surface mount |
| Supplier device packaging | PG-SOT223-4 |
| Package/casing | TO-261-4，TO-261AA |
| BSP320S E6327 | BSP320S | BSP320S E6433 | BSP320SH6327XTSA1 | BSP320SH6327 | BSP320SH6433 | |
|---|---|---|---|---|---|---|
| Description | MOSFET N-CH 60V 2.9A SOT-223 | SIPMOS Small-Signal-Transistor | MOSFET N-CH 60V 2.9A SOT-223 | Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 2.9A(Tj) Gate-source threshold voltage: 4V @ 20uA Drain-source on-resistance: 120mΩ @ 2.9A, 10V Maximum power Dissipation (Ta=25°C): 1.8W Type: N-channel N-channel, 60V, 2.9A, 120mΩ@10V | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 |
| Is it Rohs certified? | - | conform to | - | conform to | conform to | conform to |
| package instruction | - | SMALL OUTLINE, R-PDSO-G4 | - | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | - | compli | - | compliant | compliant | compliant |
| ECCN code | - | EAR99 | - | EAR99 | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | - | 60 mJ | - | 60 mJ | 60 mJ | 60 mJ |
| Configuration | - | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | - | 60 V | - | 60 V | 60 V | 60 V |
| Maximum drain current (ID) | - | 2.9 A | - | 2.9 A | 2.9 A | 2.9 A |
| Maximum drain-source on-resistance | - | 0.12 Ω | - | 0.12 Ω | 0.12 Ω | 0.12 Ω |
| FET technology | - | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | - | R-PDSO-G4 | - | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 |
| Number of components | - | 1 | - | 1 | 1 | 1 |
| Number of terminals | - | 4 | - | 4 | 4 | 4 |
| Operating mode | - | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | - | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | - | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | - | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | - | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | - | 11.6 A | - | 11.6 A | 11.6 A | 11.6 A |
| surface mount | - | YES | - | YES | YES | YES |
| Terminal form | - | GULL WING | - | GULL WING | GULL WING | GULL WING |
| Terminal location | - | DUAL | - | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | - | SILICON | - | SILICON | SILICON | SILICON |
| Base Number Matches | - | 1 | - | 1 | 1 | 1 |
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