IRF7904TRPBF datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> IRF7904TRPBF

IRF7904TRPBF: DescriptionDrain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 7.6A, 11A Gate-source threshold voltage: 2.25V @ 25uA Drain-source on-resistance: 16.2mΩ @ 7.6A, 10V max Power dissipation (Ta=25°C): 1.4W, 2W Type: Dual N-channel Dual N-channel 30V 7.6A; CategoryDiscrete semiconductor The transistor; File Size255KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

Download Datasheet Parametric Compare View All

IRF7904TRPBF Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	IRF7904TRPBF	-	-	View	Buy Now

IRF7904TRPBF Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 7.6A, 11A Gate-source threshold voltage: 2.25V @ 25uA Drain-source on-resistance: 16.2mΩ @ 7.6A, 10V max Power dissipation (Ta=25°C): 1.4W, 2W Type: Dual N-channel Dual N-channel 30V 7.6A

IRF7904TRPBF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	LEAD FREE, SO-8
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	15 weeks
Avalanche Energy Efficiency Rating (Eas)	250 mJ
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	11 A
Maximum drain current (ID)	11 A
Maximum drain-source on-resistance	10.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	2 W
Maximum pulsed drain current (IDM)	89 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

IRF7904TRPBF Related Products

	IRF7904TRPBF	IRF7904
Description	Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 7.6A, 11A Gate-source threshold voltage: 2.25V @ 25uA Drain-source on-resistance: 16.2mΩ @ 7.6A, 10V max Power dissipation (Ta=25°C): 1.4W, 2W Type: Dual N-channel Dual N-channel 30V 7.6A

Recommended Resources

Dual-frequency oscillation circuit diagram composed of audio decoder

AD594-595 functional diagram

Laser transmitter and circuit

Stabilized power supply circuit diagram designed with LR6

Digital temperature measurement circuit.gif

electronic timer

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components