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BSS138NH6327

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 230mA Gate-source threshold voltage: 1.4V @ 26uA Drain-source on-resistance: 3.5Ω @ 230mA, 10V Maximum power dissipation ( Ta=25°C): 360mW Type: N-channel N-channel
CategoryDiscrete semiconductor    The transistor   
File Size457KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSS138NH6327 Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 230mA Gate-source threshold voltage: 1.4V @ 26uA Drain-source on-resistance: 3.5Ω @ 230mA, 10V Maximum power dissipation ( Ta=25°C): 360mW Type: N-channel N-channel

BSS138NH6327 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionGREEN, PLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time10 weeks
Samacsys DescriptionInfineon,Trans BSS138NH6327 Infineon BSS138NH6327 N-channel MOSFET Transistor, 0.23 A, 60 V, 3-Pin SOT-23
Other featuresLOGIC LEVEL COMPATIBLE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)0.23 A
Maximum drain current (ID)0.23 A
Maximum drain-source on-resistance3.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)3.8 pF
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.36 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON

BSS138NH6327 Related Products

BSS138NH6327 BSS138N BSS138NL6327HTSA1 BSS138N E6433 BSS138N E6908 BSS138N E7854 BSS138N E8004 BSS138N-E6327
Description Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 230mA Gate-source threshold voltage: 1.4V @ 26uA Drain-source on-resistance: 3.5Ω @ 230mA, 10V Maximum power dissipation ( Ta=25°C): 360mW Type: N-channel N-channel 230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET MOSFET N-CH 60V 230MA SOT-23 MOSFET N-CH 60V 230MA SOT-23 MOSFET N-CH 60V 230MA SOT-23 MOSFET N-CH 60V 230MA SOT-23 MOSFET N-CH 60V 230MA SOT-23 MOSFET N-CH 60V 230MA SOT-23
FET type - - - N channel N channel N channel N channel N channel
technology - - - MOSFET (metal oxide) MOSFET (metal oxide) MOSFET (metal oxide) MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) - - - 60V 60V 60V 60V 60V
Current - Continuous Drain (Id) at 25°C - - - 230mA(Ta) 230mA(Ta) 230mA(Ta) 230mA(Ta) 230mA(Ta)
Drive voltage (maximum Rds On, minimum Rds On) - - - 4.5V,10V 4.5V,10V 4.5V,10V 4.5V,10V 4.5V,10V
Rds On (maximum value) when different Id, Vgs - - - 3.5 ohms @ 230mA, 10V 3.5 ohms @ 230mA, 10V 3.5 ohms @ 230mA, 10V 3.5 ohms @ 230mA, 10V 3.5 ohms @ 230mA, 10V
Vgs (th) (maximum value) when different Id - - - 1.4V @ 250µA 1.4V @ 250µA 1.4V @ 250µA 1.4V @ 250µA 1.4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) - - - 1.4nC @ 10V 1.4nC @ 10V 1.4nC @ 10V 1.4nC @ 10V 1.4nC @ 10V
Vgs (maximum value) - - - ±20V ±20V ±20V ±20V ±20V
Input capacitance (Ciss) at different Vds (maximum value) - - - 41pF @ 25V 41pF @ 25V 41pF @ 25V 41pF @ 25V 41pF @ 25V
Power dissipation (maximum) - - - 360mW(Ta) 360mW(Ta) 360mW(Ta) 360mW(Ta) 360mW(Ta)
Operating temperature - - - -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ)
Installation type - - - surface mount surface mount surface mount surface mount surface mount
Supplier device packaging - - - PG-SOT23-3 PG-SOT23-3 PG-SOT23-3 PG-SOT23-3 SOT-23-3
Package/casing - - - TO-236-3,SC-59,SOT-23-3 TO-236-3,SC-59,SOT-23-3 TO-236-3,SC-59,SOT-23-3 TO-236-3,SC-59,SOT-23-3 TO-236-3,SC-59,SOT-23-3
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