MOSFET N-CH 60V 230MA SOT-23
| Parameter Name | Attribute value |
| FET type | N channel |
| technology | MOSFET (metal oxide) |
| Drain-source voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) at 25°C | 230mA（Ta） |
| Drive voltage (maximum Rds On, minimum Rds On) | 4.5V，10V |
| Rds On (maximum value) when different Id, Vgs | 3.5 ohms @ 230mA, 10V |
| Vgs (th) (maximum value) when different Id | 1.4V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum value) | 1.4nC @ 10V |
| Vgs (maximum value) | ±20V |
| Input capacitance (Ciss) at different Vds (maximum value) | 41pF @ 25V |
| FET function | - |
| Power dissipation (maximum) | 360mW（Ta） |
| Operating temperature | -55°C ~ 150°C（TJ） |
| Installation type | surface mount |
| Supplier device packaging | PG-SOT23-3 |
| Package/casing | TO-236-3，SC-59，SOT-23-3 |
| BSS138N E6908 | BSS138N | BSS138NL6327HTSA1 | BSS138N E6433 | BSS138N E7854 | BSS138N E8004 | BSS138N-E6327 | BSS138NH6327 | |
|---|---|---|---|---|---|---|---|---|
| Description | MOSFET N-CH 60V 230MA SOT-23 | 230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | MOSFET N-CH 60V 230MA SOT-23 | MOSFET N-CH 60V 230MA SOT-23 | MOSFET N-CH 60V 230MA SOT-23 | MOSFET N-CH 60V 230MA SOT-23 | MOSFET N-CH 60V 230MA SOT-23 | Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 230mA Gate-source threshold voltage: 1.4V @ 26uA Drain-source on-resistance: 3.5Ω @ 230mA, 10V Maximum power dissipation ( Ta=25°C): 360mW Type: N-channel N-channel |
| FET type | N channel | - | - | N channel | N channel | N channel | N channel | - |
| technology | MOSFET (metal oxide) | - | - | MOSFET (metal oxide) | MOSFET (metal oxide) | MOSFET (metal oxide) | MOSFET (metal oxide) | - |
| Drain-source voltage (Vdss) | 60V | - | - | 60V | 60V | 60V | 60V | - |
| Current - Continuous Drain (Id) at 25°C | 230mA（Ta） | - | - | 230mA（Ta） | 230mA（Ta） | 230mA（Ta） | 230mA（Ta） | - |
| Drive voltage (maximum Rds On, minimum Rds On) | 4.5V，10V | - | - | 4.5V，10V | 4.5V，10V | 4.5V，10V | 4.5V，10V | - |
| Rds On (maximum value) when different Id, Vgs | 3.5 ohms @ 230mA, 10V | - | - | 3.5 ohms @ 230mA, 10V | 3.5 ohms @ 230mA, 10V | 3.5 ohms @ 230mA, 10V | 3.5 ohms @ 230mA, 10V | - |
| Vgs (th) (maximum value) when different Id | 1.4V @ 250µA | - | - | 1.4V @ 250µA | 1.4V @ 250µA | 1.4V @ 250µA | 1.4V @ 250µA | - |
| Gate charge (Qg) at different Vgs (maximum value) | 1.4nC @ 10V | - | - | 1.4nC @ 10V | 1.4nC @ 10V | 1.4nC @ 10V | 1.4nC @ 10V | - |
| Vgs (maximum value) | ±20V | - | - | ±20V | ±20V | ±20V | ±20V | - |
| Input capacitance (Ciss) at different Vds (maximum value) | 41pF @ 25V | - | - | 41pF @ 25V | 41pF @ 25V | 41pF @ 25V | 41pF @ 25V | - |
| Power dissipation (maximum) | 360mW（Ta） | - | - | 360mW（Ta） | 360mW（Ta） | 360mW（Ta） | 360mW（Ta） | - |
| Operating temperature | -55°C ~ 150°C（TJ） | - | - | -55°C ~ 150°C（TJ） | -55°C ~ 150°C（TJ） | -55°C ~ 150°C（TJ） | -55°C ~ 150°C（TJ） | - |
| Installation type | surface mount | - | - | surface mount | surface mount | surface mount | surface mount | - |
| Supplier device packaging | PG-SOT23-3 | - | - | PG-SOT23-3 | PG-SOT23-3 | PG-SOT23-3 | SOT-23-3 | - |
| Package/casing | TO-236-3，SC-59，SOT-23-3 | - | - | TO-236-3，SC-59，SOT-23-3 | TO-236-3，SC-59，SOT-23-3 | TO-236-3，SC-59，SOT-23-3 | TO-236-3，SC-59，SOT-23-3 | - |
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