ZXMP6A17E6TA datasheet, PDF - EEWORLD Datasheet

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ZXMP6A17E6TA: DescriptionDrain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 2.3A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 125mΩ @ 2.3A, 10V Maximum power dissipation ( Ta=25°C): 1.1W Type: P-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size491KB，7 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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ZXMP6A17E6TA Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 2.3A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 125mΩ @ 2.3A, 10V Maximum power dissipation ( Ta=25°C): 1.1W Type: P-channel

ZXMP6A17E6TA Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	60V
Continuous drain current (Id) at 25°C	2.3A
Gate-source threshold voltage	1V @ 250uA
Drain-source on-resistance	125mΩ @ 2.3A,10V
Maximum power dissipation (Ta=25°C)	1.1W
type	P channel

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