Plastic-Encapsulate Transistors
FEATURES
Epitaxial planar die construction
Complementary NPN Type available(MMBT2222A)
MMBT2907A
(PNP)
Marking:2F
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-60
-60
-5
-600
250
500
150
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
P
C
R
θJA
T
J
Tstg
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Base cut-off current
Collector cut-off current
Symbol
V
CBO
V
CEO*
V
EBO
I
CBO
I
EBO
I
CEX
h
FE(1)
h
FE(2)
Test
conditions
Min
-60
-60
-5
Typ
Max
Unit
V
V
V
I
C
=-10μA,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-10μA,I
C
=0
V
CB
=-50V,I
E
=0
V
CE
=-3V, I
C
=0
V
CE
=-30 V, V
BE(off)
=-0.5V
V
CE
=-10V,I
C
=-150mA
V
CE
=-10V,I
C
=-0.1mA
V
CE
=-10V,I
C
=-1mA
V
CE
=-10V,I
C
=-10mA
V
CE
=-10V,I
C
=-500mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
V
CE
=-20V,I
C
=-50mA,f=100MHz
V
CE
=-30V,I
C
=-150mA,
B1
=-15mA
V
CE
=-6V,I
C
=-150mA,
I
B1
=- I
B2
=- 15mA
-20
-10
-50
100
75
100
100
50
-0.4
-1.6
-1.3
-2.6
200
10
25
225
60
300
nA
nA
nA
DC current gain
h
FE(3)
h
FE(4)
h
FE(5)
Collector-emitter saturation voltage
V
CE(sat)*
V
CE(sat)*
V
BE(sat)*
V
BE(sat)*
f
T
t
d
t
r
t
S
t
f
V
V
V
V
MHz
nS
nS
nS
nS
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
*Pulse
test: tp≤300μS, δ≤0.02.
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
Plastic-Encapsulate Transistors
MMBT2907A
-0.25
Typical Characteristics
Static Characteristic
500
h
FE
—— I
C
COMMON EMITTER
V
CE
=-10V
COMMON EMITTER
T
a
=25
℃
COLLECTOR CURRENT I
C
(A)
-0.20
-800uA
-720uA
-640uA
400
-0.15
DC CURRENT GAIN h
FE
-560uA
-480uA
300
T
a
=100
℃
T
a
=25
℃
-0.10
-400uA
-320uA
200
-0.05
-240uA
-160uA
I
B
=-80uA
100
-0.00
-0
-2
-4
-6
-8
-10
-12
0
-0.1
-1
-10
-100
-600
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-0.9
V
CEsat
β=10
——
I
C
-1.2
V
BEsat
β=10
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
-0.6
-0.8
T
a
=25
℃
T
a
=100
℃
-0.4
-0.3
T
a
=100
℃
T
a
=25
℃
-0.0
-1
-10
-100
-600
-0.0
-1
-10
-100
-600
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
-600
—— V
BE
100
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/ I
C
=0
COMMON EMITTER
V
CE
=-10V
COLLECTOR CURRENT I
C
(mA)
-100
C
ib
T
a
=25
℃
CAPACITANCE C (pF)
-10
T
a
=100
℃
T
a
=25
℃
C
ob
10
-1
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
1
-0.1
-1
-10
-20
BASE-EMMITER VOLTAGE V
BE
(V)
REVERSE VOLTAGE
V
(V)
300
P
c
——
T
a
250
COLLECTOR POWER DISSIPATION
P
c
(mW)
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P2
Parametric
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Test/Measurement
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