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G30N20K

Description
Drain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 30A (Tc) Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 80mΩ @ 15A, 10V Maximum power consumption Dispersion (Ta=25°C): 150W(Tc) Type: N-channel 200V 30A 62mΩ@10V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size4MB,8 Pages
ManufacturerGoford Semiconductor
Websitehttp://www.goford.cn/
Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!
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G30N20K Overview

Drain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 30A (Tc) Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 80mΩ @ 15A, 10V Maximum power consumption Dispersion (Ta=25°C): 150W(Tc) Type: N-channel 200V 30A 62mΩ@10V

G30N20K Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)200V
Continuous drain current (Id) at 25°C30A(Tc)
Gate-source threshold voltage4.5V @ 250uA
Drain-source on-resistance80mΩ @ 15A,10V
Maximum power dissipation (Ta=25°C)150W(Tc)
typeN channel
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