NXP Semiconductors
Preliminary Data
Document Number: Order from RF Marketing
Rev. 1.1, 09/2018
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
MRFX035H
PREPRODUCTION
This high ruggedness device is designed for use in high VSWR industrial,
medical, broadcast, aerospace and mobile radio applications. Its unmatched
input and output design supports frequency use from 1.8 to 512 MHz.
Typical Performance:
V
DD
= 65 Vdc
Frequency
(MHz)
1.8–54
(1)
30–512
(1)
230
Signal Type
CW
CW
CW
P
out
(W)
40 CW
35 CW
35 CW
G
ps
(dB)
23.0
17.3
24.8
D
(%)
62.6
32.0
75.8
1.8–512 MHz, 35 W CW, 65 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
Load Mismatch/Ruggedness
Frequency
(MHz)
230
Signal Type
CW
VSWR
> 65:1
at all Phase
Angles
P
in
(dBm)
23.5
(3 dB
Overdrive)
Test
Voltage
65
Result
No Device
Degradation
NI-
-360H-
-2SB
1. The values shown are the minimum measured performance numbers across the
indicated frequency range.
Features
Unmatched input and output allowing wide frequency range utilization
50 ohm native output impedance
Device can be used single--ended or in a push--pull configuration
Qualified up to a maximum of 65 V
DD
operation
Characterized from 30 to 65 V for extended power range
High breakdown voltage for enhanced reliability
Suitable for linear application with appropriate biasing
Integrated ESD protection with greater negative gate--source voltage
range for improved Class C operation
Included in NXP product longevity program with assured supply for a
minimum of 15 years after launch
Typical Applications
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma generation
– Particle accelerators
– MRI, RF ablation and skin treatment
– Industrial heating, welding and drying systems
Radio and VHF TV broadcast
Aerospace
– HF communications
– Radar
Mobile radio
– HF and VHF communications
– PMR base stations
Gate 2
1 Drain
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
2018 NXP B.V.
MRFX035H
1
RF Device Data
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Total Device Dissipation @ T
C
= 25C
Derate above 25C
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
P
D
Value
–0.5, +179
–6.0, +10
–65 to +150
–40 to +150
–40 to +225
154
0.769
Unit
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW: Case Temperature 74.2C, 35 W CW, 65 Vdc, I
DQ
= 15 mA, 230 MHz
Symbol
R
JC
Value
(2,3)
1.3
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
Class
2, passes 2500 V
C3, passes 1200 V
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
Adc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 179 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 640
Adc)
Gate Quiescent Voltage
(V
DD
= 65 Vdc, I
D
= 15 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 100 mAdc)
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 65 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 65 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 65 Vdc, V
GS
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
0.13
13.7
42.8
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.7
2.5
—
2.75
3.0
0.17
3.0
3.5
—
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
179
—
—
—
193
—
—
400
—
10
300
nAdc
Vdc
Adc
Adc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators. (Calculator available when part is in production.)
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
(continued)
MRFX035H
2
RF Device Data
NXP Semiconductors
Innovation Lab
京公网安备 11010802033920号
EEWORLD
