MRFX035HR5 datasheet, PDF - EEWORLD Datasheet

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MRFX035HR5: DescriptionRadio frequency metal oxide semiconductor field effect (RF MOSFET) transistor 1400MHz TSV NI360H-2SB; Categorysemiconductor Discrete semiconductor The transistor The RF transistor Radio frequency (RF) metal oxide semiconductor field effect transistor (RF MOSFET); File Size251KB，7 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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Radio frequency metal oxide semiconductor field effect (RF MOSFET) transistor 1400MHz TSV NI360H-2SB

MRFX035HR5 Parametric

Parameter Name	Attribute value
Maker	NXP
Product Category	Radio Frequency Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor
Transistor polarity	N-Channel
technology	Si
Id-continuous drain current	100 mA
Vds - drain-source breakdown voltage	193 V
Gain	24.8 dB
Output Power	35 W
Minimum operating temperature	- 40 C
Maximum operating temperature	+ 150 C
Installation style	Screw Mount
Package/box	NI-360H-2SB
Encapsulation	Cut Tape
Encapsulation	Reel
working frequency	1.8 MHz to 512 MHz
series	MRFX035H
type	RF Power MOSFET
Number of channels	1 Channel
Pd-power dissipation	154 W
Factory packaging quantity	50
Vgs - gate-source voltage	- 6 V, 10 V
Vgs th-gate-source threshold voltage	1.7 V

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NXP Semiconductors

Preliminary Data

Document Number: Order from RF Marketing

Rev. 1.1, 09/2018

RF Power LDMOS Transistor

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFET

MRFX035H

PREPRODUCTION

This high ruggedness device is designed for use in high VSWR industrial,

medical, broadcast, aerospace and mobile radio applications. Its unmatched

input and output design supports frequency use from 1.8 to 512 MHz.

Typical Performance:

= 65 Vdc

Frequency

(MHz)

1.8–54

(1)

30–512

(1)

230

Signal Type

out

(W)

40 CW

35 CW

(dB)

23.0

17.3

24.8



(%)

62.6

32.0

75.8

1.8–512 MHz, 35 W CW, 65 V

WIDEBAND

RF POWER LDMOS TRANSISTOR

Load Mismatch/Ruggedness

Frequency

(MHz)

230

Signal Type

VSWR

> 65:1

at all Phase

Angles

(dBm)

23.5

(3 dB

Overdrive)

Test

Voltage

Result

No Device

Degradation

NI-

-360H-

-2SB

1. The values shown are the minimum measured performance numbers across the

indicated frequency range.

Features



Unmatched input and output allowing wide frequency range utilization



50 ohm native output impedance



Device can be used single--ended or in a push--pull configuration



Qualified up to a maximum of 65 V

operation



Characterized from 30 to 65 V for extended power range



High breakdown voltage for enhanced reliability



Suitable for linear application with appropriate biasing



Integrated ESD protection with greater negative gate--source voltage

range for improved Class C operation



Included in NXP product longevity program with assured supply for a

minimum of 15 years after launch

Typical Applications



Industrial, scientific, medical (ISM)

– Laser generation

– Plasma generation

– Particle accelerators

– MRI, RF ablation and skin treatment

– Industrial heating, welding and drying systems



Radio and VHF TV broadcast



Aerospace

– HF communications

– Radar



Mobile radio

– HF and VHF communications

– PMR base stations

Gate 2

1 Drain

(Top View)

Note: The backside of the package is the

source terminal for the transistor.

Figure 1. Pin Connections

This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.



2018 NXP B.V.

MRFX035H

RF Device Data

NXP Semiconductors

MRFX035HR5 Related Products

	MRFX035HR5	MRFX035H-30MHZ
Description	Radio frequency metal oxide semiconductor field effect (RF MOSFET) transistor 1400MHz TSV NI360H-2SB	RF MOSFET Transistors MRFX035H-30MHZ
Maker	NXP	NXP
Product Category	Radio Frequency Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor	Radio Frequency Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor
Transistor polarity	N-Channel	N-Channel
technology	Si	Si
Id-continuous drain current	100 mA	100 mA
Vds - drain-source breakdown voltage	193 V	193 V
Gain	24.8 dB	24.8 dB
Output Power	35 W	35 W
Minimum operating temperature	- 40 C	- 40 C
Maximum operating temperature	+ 150 C	+ 150 C
Installation style	Screw Mount	Screw Mount
Package/box	NI-360H-2SB	NI-360H-2SB
working frequency	1.8 MHz to 512 MHz	30 MHz
series	MRFX035H	MRFX035H
type	RF Power MOSFET	RF Power MOSFET
Number of channels	1 Channel	1 Channel
Pd-power dissipation	154 W	154 W
Factory packaging quantity	50	1
Vgs - gate-source voltage	- 6 V, 10 V	- 6 V, 10 V
Vgs th-gate-source threshold voltage	1.7 V	1.7 V

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