Power Field-Effect Transistor, 7A I(D), 20V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-82, SC-82A, SC-88, MCPH6, 6 PIN
Parameter Name | Attribute value |
Maker | SANYO |
Parts packaging code | SC-88 |
package instruction | SMALL OUTLINE, R-PDSO-F6 |
Contacts | 6 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Is Samacsys | N |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 20 V |
Maximum drain current (Abs) (ID) | 7 A |
Maximum drain current (ID) | 7 A |
Maximum drain-source on-resistance | 0.024 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PDSO-F6 |
Number of components | 1 |
Number of terminals | 6 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 1.5 W |
Maximum pulsed drain current (IDM) | 28 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | FLAT |
Terminal location | DUAL |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |