GBU406 datasheet, PDF - EEWORLD Datasheet

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GBU406: DescriptionBridge Rectifier Diode, 4A, 600V V(RRM),; Categorydiode; File Size108KB，2 Pages; ManufacturerGalaxy Semi-Conductor Co., Ltd.; Environmental Compliance

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GBU406 Overview

Bridge Rectifier Diode, 4A, 600V V(RRM),

GBU406 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code	unknown
Is Samacsys	N
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
Maximum non-repetitive peak forward current	150 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	4 A
Maximum repetitive peak reverse voltage	600 V
surface mount	NO
Base Number Matches	1

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FEATURES

GALAXY ELECTRICAL

GBU4005 --- GBU410

VOLTAGE RANGE: 50 --- 1000 V

CURRENT: 4.0 A

SILICON BRIDGE RECT IFIERS

Ideal for printed circuit board

Reliable low cos t cons truction utilizing m olded

plas tic technique

Plas tic m aterrial has U/L flam m ability clas s ification

94V-O

Mounting pos ition: Any

GBU

.933(23.7)

.894(22.7)

.185(4.7)

.165(4.2)

.160(4.1)

.140(3.5)

.310(7.9)

.290(7.4)

.140(3.56)

.130(3.30)

.075(1.9)R.TYP.

.085(2.16)

.065(1.65)

.740(18.8)

.720(18.3)

.080(2.03)

.060(1.52)

Glass passivated chip junctions

.100(2.54)

.085(2.16)

.190(4.83)

.210(5.33)

.050(1.27)

.040(1.02)

.710(18)

.690(17.5)

.085(2.18)

.075(1.90)

.022(.56)

.018(.46)

inch(mm)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

am bient tem perature unles s otherwis e s pecified.

Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.

GBU

4005

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average f orw ard Tc=100

output current

=40

GBU

401

100

GBU

402

200

140

200

GBU

404

400

280

400

4.0

3.0

150.0

GBU

406

600

420

600

GBU

408

800

560

800

GBU

410

1000

700

1000

UNITS

RRM

R MS

F (AV)

Peak f orw ard surge current

8.3ms single half -sine-w ave

superimposed on rated load

Maximum instantaneous f orw ard voltage

at 2.0 A

Maximum reverse current

at rated DC blocking voltage

=25

=125

(note 2)

(note 1)

Operating junction temperature range

Storage temperature range

F SM

θJA

θJC

STG

100

1.0

5.0

500.0

22.0

4.2

- 55 ---- + 150

Typical junction capacitance per leg (note 3)

Typical thermal resistance per leg

N OTE: 1. Unit case m ounted on 1.6x1.6x0.06" thick (4.0x4.0x0.15cm ) AI. Plate.

2. U nits m ounted on P.C .B. with 0.5x0.5" (12x12m m) copper pads and 0.375" (9.5m m ) lead length.

3. Measured at 1.0 MH z and applied rev erse v oltage of 4.0 v olts.

www.galaxycn.com

Document Number 0287076

GALAXY ELECTRICAL

GBU406 Related Products

	GBU406	GBU404	GBU408	GBU4005	GBU410
Description	Bridge Rectifier Diode, 4A, 600V V(RRM),	Bridge Rectifier Diode, 4A, 400V V(RRM),	Bridge Rectifier Diode, 4A, 800V V(RRM),	Bridge Rectifier Diode, 4A, 50V V(RRM),	Bridge Rectifier Diode, 4A, 1000V V(RRM),
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Maker	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code	unknown	unknown	unknown	unknown	unknow
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1 V	1 V	1 V
Maximum non-repetitive peak forward current	150 A	150 A	150 A	150 A	150 A
Number of components	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	4 A	4 A	4 A	4 A	4 A
Maximum repetitive peak reverse voltage	600 V	400 V	800 V	50 V	1000 V
surface mount	NO	NO	NO	NO	NO

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