EEWORLDEEWORLDEEWORLD

Part Number

Search

GBU408

Description
Bridge Rectifier Diode, 4A, 800V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size108KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric Compare View All

GBU408 Online Shopping

Suppliers Part Number Price MOQ In stock  
GBU408 - - View Buy Now

GBU408 Overview

Bridge Rectifier Diode, 4A, 800V V(RRM),

GBU408 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current150 A
Number of components4
Maximum operating temperature150 °C
Maximum output current4 A
Maximum repetitive peak reverse voltage800 V
surface mountNO
BL
FEATURES
GALAXY ELECTRICAL
GBU4005 --- GBU410
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 4.0 A
SILICON BRIDGE RECT IFIERS
Ideal for printed circuit board
Reliable low cos t cons truction utilizing m olded
plas tic technique
Plas tic m aterrial has U/L flam m ability clas s ification
94V-O
Mounting pos ition: Any
GBU
.933(23.7)
.894(22.7)
.185(4.7)
.165(4.2)
.160(4.1)
.140(3.5)
45
.310(7.9)
.290(7.4)
0
.140(3.56)
.130(3.30)
+
+
.075(1.9)R.TYP.
.085(2.16)
.065(1.65)
.740(18.8)
.720(18.3)
_
.080(2.03)
.060(1.52)
~
~
+
Glass passivated chip junctions
.100(2.54)
.085(2.16)
.190(4.83)
.210(5.33)
.050(1.27)
.040(1.02)
.710(18)
.690(17.5)
.085(2.18)
.075(1.90)
.022(.56)
.018(.46)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
GBU
4005
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard Tc=100
output current
@T
A
=40
GBU
401
100
70
100
GBU
402
200
140
200
GBU
404
400
280
400
4.0
3.0
150.0
GBU
406
600
420
600
GBU
408
800
560
800
GBU
410
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
R MS
V
DC
I
F (AV)
50
35
50
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
Maximum instantaneous f orw ard voltage
at 2.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=125
(note 2)
(note 1)
Operating junction temperature range
Storage temperature range
I
F SM
A
V
F
I
R
C
J
R
θJA
R
θJC
T
J
T
STG
100
1.0
5.0
500.0
45
22.0
4.2
- 55 ---- + 150
- 55 ---- + 150
V
μ
A
mA
pF
/W
Typical junction capacitance per leg (note 3)
Typical thermal resistance per leg
N OTE: 1. Unit case m ounted on 1.6x1.6x0.06" thick (4.0x4.0x0.15cm ) AI. Plate.
2. U nits m ounted on P.C .B. with 0.5x0.5" (12x12m m) copper pads and 0.375" (9.5m m ) lead length.
3. Measured at 1.0 MH z and applied rev erse v oltage of 4.0 v olts.
www.galaxycn.com
Document Number 0287076
BL
GALAXY ELECTRICAL
1.

GBU408 Related Products

GBU408 GBU404 GBU406 GBU4005 GBU410
Description Bridge Rectifier Diode, 4A, 800V V(RRM), Bridge Rectifier Diode, 4A, 400V V(RRM), Bridge Rectifier Diode, 4A, 600V V(RRM), Bridge Rectifier Diode, 4A, 50V V(RRM), Bridge Rectifier Diode, 4A, 1000V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code unknown unknown unknown unknown unknow
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V 1 V
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A 150 A
Number of components 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 4 A 4 A 4 A 4 A 4 A
Maximum repetitive peak reverse voltage 800 V 400 V 600 V 50 V 1000 V
surface mount NO NO NO NO NO
This piece of clothing generates energy through movement. Can it help solve the problem of a cell phone running out of battery?
Wearing this dress, you can generate energy through exercise. Can this solve the problem of your cell phone running out of battery?...
3228 Power technology
Current sampling in FOC
Current sampling is the basis of FOC, which includes current sensor sampling and resistor sampling. Resistor sampling is widely used due to its simple and low-cost application. Resistance sampling inc...
fish001 Analogue and Mixed Signal
TI designs next-generation industrial drive and control systems
[i=s]This post was last edited by Jacktang on 2020-11-4 21:26[/i]Many original equipment manufacturers (OEMs) have historically relied on field programmable gate array (FPGA) technology to drive cutti...
Jacktang DSP and ARM Processors
About LM5117 overcurrent protection --- from a provincial competition question in 2016
[i=s]This post was last edited by 2429129589 on 2019-12-18 11:55[/i]This is an old question from the 2016 TI Cup Provincial Competition about designing a step-down DC switching power supply using LM51...
2429129589 Power technology
CCS installation package
Request to share the CCS installation package...
FanXJ123 TI Technology Forum
TI C600 Compile Feedback Output Related Options
Programmers can choose to view some of the compilation information fed back by the above compilers to understand the degree of optimization of the code and adjust the code structure accordingly. If yo...
Aguilera DSP and ARM Processors

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号