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Jans2N2369AUB/TR

Description
Bipolar Transistor - Bipolar Junction Transistor (BJT)
Categorysemiconductor    Discrete semiconductor    The transistor    Bipolar transistor - a bipolar junction transistor (BJT)   
File Size50KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

Jans2N2369AUB/TR Overview

Bipolar Transistor - Bipolar Junction Transistor (BJT)

Jans2N2369AUB/TR Parametric

Parameter NameAttribute value
MakerMicrosemi
Product CategoryBipolar Transistor - Bipolar Junction Transistor (BJT)
RoHSN
technologySi
Installation styleSMD/SMT
Package/boxLCC-3
Transistor polarityNPN
ConfigurationSingle
Collector-emitter maximum voltage VCEO15 V
Collector-base voltage VCBO40 V
Emitter-Base voltage VEBO4.5 V
Collector-emitter saturation voltage0.2 V
Maximum DC collector current0.1 A
Minimum operating temperature- 65 C
Maximum operating temperature+ 200 C
DC current gain hFE maximum120 at 100 mA, 1 V
DC collector/Base Gain hfe Min20 at 100 mA, 1 V
Pd-power dissipation0.36 W
Factory packaging quantity1
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/317
DEVICES
LEVELS
2N2369A
2N2369AU
2N2369AUA
2N2369AUB
2N2369AUBC *
2N4449
JAN
JANTX
JANTXV
JANS
*
Available to JANS quality level only.
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Total Power Dissipation @
T
A
= +25°C
2N2369A; 2N4449
UA, UB, UBC
U
2N2369A / U / UA
2N4449 / UB / UBC
2N2369A / U / UA
2N4449 / UB / UBC
Symbol
V
CEO
V
EBO
V
CBO
I
CES
P
T
T
op
, T
stg
Value
15
20
4.5
6.0
40
40
0.36
(1)
0.36
(1, 5)
0.50
(4)
-65 to +200
Unit
Vdc
Vdc
Vdc
Vdc
W
TO-18 (TO-206AA)
2N2369A
TO-46 (TO-206AB)
Operating & Storage Junction Temperature Range
°C
2N4449
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Ambient-to-Case
2N2369A; 2N4449
UA, UB, UBC
U
Note:
1.
2.
3.
4.
5.
Symbol
R
θJA
Value
400
400
(5)
350
Unit
°C/W
SURFACE MOUNT
UA
Derate linearly 2.06 mW°/C above T
A
= +25°C.
Derate linearly 4.76 mW°/C above T
C
= +95°C.
Derate linearly 3.08 mW°/C above T
C
= +70°C.
Derate linearly 3.44 mW°/C above T
A
= +54.5°C.
Mounted on FR-4 PCB (1Oz. Cu) with contacts 20 mils larger than package pads.
SURFACE MOUNT
UB & UBC
(UBC = Ceramic Lid Version)
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
Collector-Base Cutoff Current
V
CE
= 20Vdc
T4-LDS-0057 Rev. 2 (081394)
Symbol
Min.
Max.
Unit
V
(BR)CEO
I
CES
15
0.4
Vdc
μAdc
SURFACE MOUNT
U (Dual Transistor)
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