IKFW50N60ET
TRENCHSTOP
TM
AdvancedIsolation
TRENCHSTOP
TM
IGBTcopackedwithRapid1fastandsoftantiparalleldiode
infullyisolatedpackage
Features:
TRENCHSTOP™technologyoffers:
•VerylowV
CE(sat)
•Shortcircuitwithstandtime5µsatT
vj
=175°C
•PositivetemperaturecoefficientinV
CE(sat)
•LowEMI
•Verysoft,fastrecoveryanti-paralleldiode
•Maximumjunctiontemperature175°C
•2500V
RMS
electricalisolation,50/60Hz,t=1min
•100%testedisolatedmountingsurface
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt
PotentialApplications:
•GeneralPurposeDrives(GPD)
•ServoDrives
•IndustrialUPS
•Welding
•SolarStringInverter
ProductValidation:
Qualifiedforindustrialapplicationsaccordingtotherelevanttests
ofJEDEC47/20/22
Fully isolated package TO-247
C
G
E
KeyPerformanceandPackageParameters
Type
IKFW50N60ET
V
CE
600V
I
C
50A
V
CEsat
,T
vj
=25°C
1.5V
T
vjmax
175°C
Marking
K50DET
Package
PG-TO247-3-AI
Datasheet
www.infineon.com
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V2.1
2017-09-21
IKFW50N60ET
TRENCHSTOP
TM
AdvancedIsolation
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
2
V2.1
2017-09-21
IKFW50N60ET
TRENCHSTOP
TM
AdvancedIsolation
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Collector-emittervoltage,T
vj
≥25°C
DCcollectorcurrent,limitedbyT
vjmax
T
h
=25°C
T
h
=65°C
T
h
=65°C
Pulsedcollectorcurrent,t
p
limitedbyT
vjmax
Turn off safe operating area
V
CE
≤600V,T
vj
≤175°C,t
p
=1µs
Diodeforwardcurrent,limitedbyT
vjmax
T
h
=25°Cvaluelimitedbybondwire
T
h
=65°C
Diodepulsedcurrent,t
p
limitedbyT
vjmax
Gate-emitter voltage
TransientGate-emittervoltage(t
p
≤10µs,D<0.010)
Short circuit withstand time
V
GE
=15.0V,V
CC
≤400V
Allowed number of short circuits < 1000
Time between short circuits:
≥
1.0s
T
vj
=150°C
PowerdissipationT
h
=25°C
PowerdissipationT
h
=65°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
IsolationvoltageRMS,f=50/60Hz,t=1min
2)
ThermalResistance
Parameter
R
th
Characteristics
IGBT thermal resistance,
3)
junction - heatsink
Diode thermal resistance,
3)
junction - heatsink
Thermal resistance
junction - ambient
R
th(j-h)
R
th(j-h)
R
th(j-a)
Symbol Conditions
Symbol
V
CE
I
C
I
Cpuls
-
I
F
I
Fpuls
V
GE
Value
600
73.0
59.0
64.0
1)
150.0
150.0
80.0
60.0
150.0
±20
±30
Unit
V
A
A
A
A
A
V
t
SC
5
P
tot
T
vj
T
stg
164.0
120.0
-40...+175
-55...+150
260
M
V
isol
0.6
2500
µs
W
°C
°C
°C
Nm
V
Value
min.
typ.
max.
Unit
-
-
-
0.77
1.18
-
0.91
1.30
65
K/W
K/W
K/W
1)
Equivalent current rating in TO-247-3 at T
h
= 65°C using reference insulation material: 152µm, 1.3 W/mK, standard polyimide based reinforced carrier
insulator
2)
For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.
3)
At force on body F = 500N, T
a
= 25ºC
Datasheet
3
V2.1
2017-09-21
IKFW50N60ET
TRENCHSTOP
TM
AdvancedIsolation
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
StaticCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V,I
C
=0.50mA
Collector-emitter saturation voltage
V
CEsat
V
GE
=15.0V,I
C
=50.0A
T
vj
=25°C
T
vj
=175°C
V
GE
=0V,I
F
=50.0A
T
vj
=25°C
T
vj
=175°C
I
C
=0.80mA,V
CE
=V
GE
V
CE
=600V,V
GE
=0V
T
vj
=25°C
T
vj
=175°C
V
CE
=0V,V
GE
=20V
V
CE
=20V,I
C
=50.0A
600
-
-
-
-
4.1
-
-
-
-
-
1.50
1.90
1.45
1.40
4.9
-
880
-
25.0
-
2.00
-
1.75
-
5.7
40
-
100
-
V
V
Symbol Conditions
Value
min.
typ.
max.
Unit
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V
F
V
GE(th)
I
CES
I
GES
g
fs
V
V
µA
nA
S
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
C
ies
C
oes
C
res
Q
G
L
E
V
GE
=15.0V,V
CC
≤400V,
t
SC
≤5µs
T
vj
=150°C
V
CC
=480V,I
C
=50.0A,
V
GE
=15V
V
CE
=25V,V
GE
=0V,f=1MHz
-
-
-
-
-
3216
150
90
290.0
13.0
-
-
-
-
-
nC
nH
pF
Symbol Conditions
Value
min.
typ.
max.
Unit
Short circuit collector current
Max. 1000 short circuits
I
C(SC)
Time between short circuits:
≥
1.0s
SwitchingCharacteristic,InductiveLoad
Parameter
IGBTCharacteristic,atT
vj
=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
458
-
A
Symbol Conditions
Value
min.
-
-
-
-
-
-
-
typ.
28
33
305
27
1.50
1.42
2.92
max.
-
-
-
-
-
-
-
Unit
T
vj
=25°C,
V
CC
=400V,I
C
=50.0A,
V
GE
=0.0/15.0V,
R
G(on)
=7.0Ω,R
G(off)
=7.0Ω,
Lσ=75nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
ns
ns
ns
ns
mJ
mJ
mJ
Datasheet
4
V2.1
2017-09-21
IKFW50N60ET
TRENCHSTOP
TM
AdvancedIsolation
DiodeCharacteristic,atT
vj
=25°C
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
t
rr
Q
rr
T
vj
=25°C,
V
R
=400V,
I
F
=50.0A,
di
F
/dt=1000A/µs
-
-
-
-
91
1.24
27.0
-1955
-
-
-
-
ns
µC
A
A/µs
Diode peak reverse recovery current
I
rrm
di
rr
/dt
SwitchingCharacteristic,InductiveLoad
Parameter
IGBTCharacteristic,atT
vj
=175°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
DiodeCharacteristic,atT
vj
=175°C
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
t
rr
Q
rr
T
vj
=175°C,
V
R
=400V,
I
F
=50.0A,
di
F
/dt=1000A/µs
-
-
-
-
139
3.29
34.0
-1489
-
-
-
-
ns
µC
A
A/µs
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
vj
=175°C,
V
CC
=400V,I
C
=50.0A,
V
GE
=0.0/15.0V,
R
G(on)
=7.0Ω,R
G(off)
=7.0Ω,
Lσ=75nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
-
-
-
-
-
-
-
27
35
342
36
2.20
1.97
4.17
-
-
-
-
-
-
-
ns
ns
ns
ns
mJ
mJ
mJ
Symbol Conditions
Value
min.
typ.
max.
Unit
Diode peak reverse recovery current
I
rrm
di
rr
/dt
Datasheet
5
V2.1
2017-09-21
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