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SBS24 RGG

Description
Schottky Diode and Rectifier 2A, 40V, THIN MINI SCHOTTKY BRIDGE RECT.
Categorysemiconductor    Discrete semiconductor    Diode rectifier with    Schottky diode rectifier   
File Size214KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SBS24 RGG Overview

Schottky Diode and Rectifier 2A, 40V, THIN MINI SCHOTTKY BRIDGE RECT.

SBS24 RGG Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Product CategorySchottky diodes and rectifiers
Package/boxABS-4
EncapsulationReel
Factory packaging quantity5000
unit weight11 g
SBS24 - SBS26
Taiwan Semiconductor
CREAT BY ART
2A, 40V - 60V Schottky Bridge Rectifiers
FEATURES
- Schottky technology
- Ideal for automated placement
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ABS
TYPICAL APPLICATION
- General purpose use in ac-to-dc bridge full wave rectification for
LED bulb , also suitable for telecommunication
MECHANICAL DATA
Case:
Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Polarity as marked on the body
Weight:
0.09g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 2 A
Maximum DC reverse current
at rated DC blocking voltage (Note 2)
Typical thermal resistance
Operating junction temperature range (Note 3)
Storage temperature range
Note 1: Pulse test with PW=300
μs,
1% duty cycle
Note 2: Pulse test with PW=40ms
Note 3:
Condition to avoid thermal runaway based on the application thermal conduction,
δ=0.5
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
R
θJL
R
θJA
T
J
T
STG
0.50
100
30
75
- 55 to +150
- 55 to +150
SBS24
40
28
40
SBS25
50
35
50
2
50
10.3
0.70
50
SBS26
60
42
60
UNIT
V
V
V
A
A
A
2
s
V
μA
°C/W
°C
°C
Document Number: DS_D0000046
Version: B15

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