®
T1235H
12A TRIAC
S
A2
SNUBBERLESS™ HIGH TEMPERATURE
Table 1: Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT (Q
1
)
Value
12
600
35
Unit
A
V
mA
A2
G
A1
A2
DESCRIPTION
Specifically designed for use in high temperature
environment (found in hot appliances such as
cookers, ovens, hobs, electric heaters, coffee ma-
chines...), the new 12 Amps
T1235H
triacs provide
an enhanced performance in terms of power loss
and thermal dissipation. This allows for optimiza-
tion of the heatsinking dimensioning, leading to
space and cost effectivness when compared to
electro-mechnical solutions.
Based on ST snubberless technology, they offer
high commutation switching capabilities and high
noise immunity levels. And, thanks to their clip as-
sembly technique, they provide a superior per-
formance in surge current handling.
Table 3: Absolute Maximum Ratings
Symbol
I
T(RMS)
I
TSM
I
²
t
dI/dt
Parameter
RMS on-state current (full sine wave)
A1 A2
G
A1
A2
G
D
2
PAK
(T1235H-600G)
TO-220AB
(T1235H-600T)
Table 2: Order Codes
Part Number
T1235H-600G
T1235H-600G-TR
T1235H-600TRG
Marking
T1235H600G
T1235H600G
T1235H600T
Value
T
c
= 135°C
t = 20 ms
t = 16.7 ms
12
140
145
112
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 150°C
50
700
4
1
- 40 to + 150
- 40 to + 150
Unit
A
A
A
²
s
A/µs
V
A
W
°C
Non repetitive surge peak on-state F = 50 Hz
current (full cycle, T
j
initial = 25°C) F = 60 Hz
I
²
t Value for fusing
Critical rate of rise of on-state
current I
G
= 2 x I
GT
, t
r
≤
100 ns
t
p
= 10 ms
F = 120 Hz
V
DSM
/V
RSM
Non repetitive surge peak off-state t
p
= 10 ms
voltage
I
GM
P
G(AV)
T
stg
T
j
February 2006
Peak gate current
Average gate power dissipation
t
p
= 20 µs
Storage junction temperature range
Operating junction temperature range
REV. 6
1/8
T1235H
Tables 4: Electrical Characteristics
(T
j
= 25°C, unless otherwise specified)
Symbol
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
Test Conditions
V
D
= 12 V R
L
= 33
Ω
V
D
= V
DRM
R
L
= 3.3 kΩ
I
T
= 100 mA
I
G
= 1.2 I
GT
V
D
= 67 %V
DRM
gate open
T
j
= 150°C
I - III
II
T
j
= 150°C
Quadrant
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
Value
35
1.3
0.15
35
50
80
300
5.3
Unit
mA
V
V
mA
mA
V/µs
A/ms
(dI/dt)c (2) Without snubber
T
j
= 150°C
Table 5: Static Characteristics
Symbol
V
T
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 17 A
Test Conditions
t
p
= 380 µs
T
j
= 25°C
T
j
= 150°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 150°C
MAX.
MAX.
MAX.
MAX.
Value
1.55
0.80
25
5
5.5
mA
3.5
Unit
V
V
mΩ
µA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
V
DRM
/V
RRM
= 400V
(at mains peak voltage)
Note 1:
minimum I
GT
is guaranted at 10% of I
GT
max.
Note 2:
for both polarities of A2 referenced to A1.
Table 6: Thermal resistance
Symbol
R
th(j-c)
Junction to case (AC)
Junction to ambient
S = 1 cm
²
Parameter
D
2
PAK
TO-220AB
D
2
PAK
TO-220AB
45
60
°C/W
Value
1.2
Unit
°C/W
R
th(j-a)
S = Copper surface under tab.
2/8
T1235H
Figure 1: Maximum power dissipation versus
RMS on-state current (full cycle)
P(W)
14
12
10
8
6
4
2
14
12
10
8
6
4
2
Figure 2: RMS on-state current versus case
temperature (full cycle)
I
T(RMS)
(A)
I
T(RMS)
(A)
0
0
2
4
6
8
10
12
0
0
25
50
T
C
(°C)
75
100
125
150
Figure 3: RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35µm) (full cycle)
I
T(RMS)
(A)
5
D
2
PAK
(S=1cm
2
)
Figure 4: Relative variation of thermal
impedance versus pulse duration
K=[Z
th
/R
th
]
1.00
Z
th(j-c)
4
3
0.10
2
Z
th(j-a)
1
T
C
(°C)
0
0
25
50
75
100
125
150
t
p
(s)
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Figure 5: On-state characteristics (maximum
values)
I
TM
(A)
200
100
T
j
max.
V
to
= 0.85V
R
d
= 50 m
Ω
T
j
= T
j
max.
Figure 6: Surge peak on-state current versus
number of cycles
I
TSM
(A)
150
125
t=20ms
100
Non repetitive
T
j
initial=25°C
T
j
= 25°C.
One cycle
75
50
25
Repetitive
T
C
=135°C
10
V
TM
(V)
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Number of cycles
0
1
10
100
1000
3/8
T1235H
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width t
p
< 10 ms
and corresponding value of I
2
t
I
TSM
(A), I t (A s)
2000
T
j
initial=25°C
dI/dt limitation:
50A/µs
2
2
Figure 8: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
2.5
2.0
I
GT
1000
1.5
I
H
& I
L
1.0
I
TSM
0.5
t
p
(ms)
100
0.01
0.10
1.00
It
2
T
j
(°C)
0.0
10.00
-40
-20
0
20
40
60
80
100
120
140
160
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
6.0
5.0
Figure 10: Relative variation of critical rate of
decrease of main current versus junction
temperature
(dI/dt)c [T
j
] / (dI/dt)c [T
j
= 150°C]
8
7
6
4.0
3.0
2.0
1.0
5
4
3
2
(dV/dt)c (V/µs)
0.0
0.1
1.0
10.0
100.0
1
0
25
50
75
T
j
(°C)
100
125
150
Figure 11: Leakage current versus junction
temperature for different values of blocking
voltage (typical values)
I
DRM
/ I
RRM
(mA)
1E+1
Figure 12: Acceptable repetitive peak off-state
voltage versus case-ambient thermal resistance
V
DRM
/ V
RRM
(V)
700
600
T
j
= 150°C
R
th(j-c)
= 1.2°C/W
1E+0
V
D
= V
R
= 600V
V
D
= V
R
= 400V
500
400
300
200
100
0
1E-1
V
D
= V
R
= 200V
1E-2
T
j
(°C)
1E-3
50
75
100
125
150
R
th(c-a)
(°C/W)
0
2
4
6
8
10
12
14
16
18
20
4/8
T1235H
Figure 13: D
2
PAK Thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35 µm)
R
th(j-a)
(°C/W)
80
70
60
50
40
30
20
10
0
0
4
8
12
16
20
24
28
32
36
40
D
2
PAK
S(cm²)
Figure 14: Ordering Information Scheme
T 12 35 H - 600 G (-TR)
Triac series
Current
12 = 12A
Sensitivity
35 = 35mA
Temperature
H = High
Voltage
600 = 600V
Package
G = D
2
PAK
T = TO-220AB
Packing mode
Blanck = D
2
PAK in Tube
RG = TO-220AB in Tube
-TR = Tape & Reel
Table 7: Product Selector
Part Numbers
T1235H-600G
T1235H-600T
Voltage
600 V
600 V
Sensitivity
35 mA
35 mA
Type
Snubberless
Snubberless
Package
D
2
PAK
TO-220AB
5/8
京公网安备 11010802033920号
EEWORLD
