110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Parts packaging code | BGA |
package instruction | 10 X 11 MM, LEAD FREE, FBGA-48 |
Contacts | 48 |
Reach Compliance Code | unknow |
ECCN code | 3A991.B.1.A |
Maximum access time | 65 ns |
Other features | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE |
startup block | TOP |
command user interface | YES |
Universal Flash Interface | YES |
Data polling | YES |
JESD-30 code | R-PBGA-B48 |
JESD-609 code | e2 |
length | 10.95 mm |
memory density | 134217728 bi |
Memory IC Type | FLASH |
memory width | 16 |
Humidity sensitivity level | 3 |
Number of functions | 1 |
Number of departments/size | 4,255 |
Number of terminals | 48 |
word count | 8388608 words |
character code | 8000000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -25 °C |
organize | 8MX16 |
Package body material | PLASTIC/EPOXY |
encapsulated code | VFBGA |
Encapsulate equivalent code | BGA48,12X18,20 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | 260 |
power supply | 1.8 V |
Programming voltage | 1.8 V |
Certification status | Not Qualified |
ready/busy | YES |
Maximum seat height | 1 mm |
Department size | 8K,32K |
Maximum standby current | 0.00004 A |
Maximum slew rate | 0.06 mA |
Maximum supply voltage (Vsup) | 1.95 V |
Minimum supply voltage (Vsup) | 1.7 V |
Nominal supply voltage (Vsup) | 1.8 V |
surface mount | YES |
technology | CMOS |
Temperature level | OTHER |
Terminal surface | Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni) |
Terminal form | BALL |
Terminal pitch | 0.5 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | 40 |
switch bit | YES |
type | NOR TYPE |
width | 9.95 mm |
Maximum write cycle time (tWC) | 45 ms |
Base Number Matches | 1 |