Data Sheet, Rev.1.3, February 2007
BGA615L7
Silicon Germanium GPS Low Noise Amplifier
RF & Protection Devices
Edition 2007-02-12
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2009.
All Rights Reserved.
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disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
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Information
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BGA615L7
BGA615L7
Revision History: 2007-02-12, Rev.1.3
Previous Version: BGA615L7 V1.2
Page
4
5
6
12
13
Subjects (major changes since last revision)
added moisture sensitivity level
added thermal resistance
adjusted power gain settling times
adjusted inband and out of band compression points
updated recommended land pattern (added solder mask defined layout)
added reel diameter and pcs / reel information
Data Sheet
3
Rev.1.3, 2007-02-12
Silicon Germanium GPS Low Noise Amplifier
BGA615L7
Silicon Germanium GPS Low Noise Amplifier
Features
• High gain: 18 dB
• Low Noise Figure: 0.9 dB
• Power off function
• Operating frequency 1575 MHz
• Supply voltage: 2.4 V to 3.2 V
• Tiny PG-TSLP-7-1 leadless package
• B7HF Silicon Germanium technology
• RF output internally matched to 50
Ω
• Low external component count
• 1 kV HBM ESD protection (including AI-pin)
• Moisture sensitivity level: MSL 1
Application
• 1575 MHz GPS
6
5
4
7
1
2
3
TSLP-7-1
VCC PON
BIAS
AI
BIAS
AO
ESD
VSS
GND
Figure 1
Description
The BGA615L7 is a front-end low noise amplifier for Global Positioning System (GPS) applications. The LNA
provides 18 dB gain, 0.9 dB noise figure and high linearity performance, allowing it to be used as a first-stage LNA.
Current consumption is as low as 5.6 mA. The BGA615L7 is based upon Infineon Technologies‘ B7HF Silicon
Germanium technology. It operates over a 2.4 V to 3.2 V supply range.
Type
BGA615L7
Data Sheet
Package
PG-TSLP-7-1
Marking
BS
4
Chip
T0595
Rev.1.3, 2007-02-12
Blockdiagram
BGA615L7
Silicon Germanium GPS Low Noise Amplifier
Pin Definition and Function
Table 1
Pin No.
1
2
3
4
5
6
7
Maximum Ratings
Table 2
Parameter
1)
Voltage at pin VCC
Voltage at pin AI
Voltage at pin BIAS
Voltage at pin AO
Voltage at pin PON
Voltage at pin VSS
Current into pin VCC
RF input power
Total power dissipation
Junction temperature
Ambient temperature range
Storage temperature range
Thermal resistance junction soldering point
ESD capability all pins (HBM: JESD22A-114)
1) All voltages refer to GND-Node.
Pin Definition and Function
Symbol
AI
BIAS
GND
PON
VCC
AO
VSS
Function
LNA input
DC bias
RF ground
Power on control
Supply control
LNA output
DC ground
Maximum Ratings
Symbol
Value
-0.3 ... 3.6
-0.3 ... 0.9
-0.3 ... 0.9
-0.3 ...
V
CC
+ 0.3
-0.3 ...
V
CC
+ 0.3
-0.3 ... 0.3
10
10
36
150
-30 ... 85
-65 ... 150
240
1000
Unit
V
V
V
V
V
V
mA
dBm
mW
°C
°C
°C
K/W
V
V
CC
V
AI
V
BIAS
V
AO
V
PON
V
SS
I
CC
P
IN
P
tot
T
J
T
A
T
STG
R
th JS
V
ESD
Data Sheet
5
Rev.1.3, 2007-02-12