23LCV1024-I/SN datasheet, PDF - EEWORLD Datasheet

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23LCV1024-I/SN: DescriptionStatic random access memory 1024K 2.5V SPI SERIAL Static random access memory Vbat; Categorystorage storage; File Size588KB，31 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com; Environmental Compliance

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23LCV1024-I/SN Overview

Static random access memory 1024K 2.5V SPI SERIAL Static random access memory Vbat

23LCV1024-I/SN Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Microchip
package instruction	3.90 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SOIC-8
Reach Compliance Code	compliant
Factory Lead Time	15 weeks
Samacsys Description	Serial SRAM,SPI 1Mb,battery,SDI SOIC 8 Microchip 23LCV1024-I/SN SRAM Memory, 1Mbit, 2.5 → 5.5 V, 5ns 8-Pin SOIC
Maximum clock frequency (fCLK)	20 MHz
I/O type	SEPARATE
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
length	4.9 mm
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	1
Number of functions	1
Number of ports	1, (3 LINE)
Number of terminals	8
word count	131072 words
character code	128000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP8,.25
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	260
power supply	3/5 V
Certification status	Not Qualified
Maximum seat height	1.75 mm
Maximum standby current	0.00001 A
Minimum standby current	2.5 V
Maximum slew rate	0.01 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Matte Tin (Sn) - annealed
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
width	3.9 mm

User Manual

23LCV1024-I/SN Related Products

	23LCV1024-I/SN	23LCV1024-I-ST	23LCV1024T-I-ST	23LCV1024-E/ST	23LCV1024-E/SN	23LCV1024-E/P	23LCV1024T-I/SN	23LCV1024T-E/SN
Description	Static random access memory 1024K 2.5V SPI SERIAL Static random access memory Vbat	SRAM 1024K 2.5V SPI SERIAL SRAM Vbat	SRAM 1024K 2.5V SPI SERIAL SRAM Vbat	SRAM 1024K 2.5V SPI SERIAL SRAM Vbat	SRAM 1024K 2.5V SPI SERIAL SRAM Vbat	SRAM 1024K 2.5V SPI SERIAL SRAM Vbat	Static random access memory 1024K 2.5V SPI SERIAL Static random access memory Vbat	Static random access memory 1024K 2.5V SPI SERIAL Static random access memory Vbat
Product Attribute	-	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	-	-
Manufacturer	-	Microchip	Microchip	Microchip	Microchip	Microchip	-	-
Product Category	-	SRAM	SRAM	SRAM	SRAM	SRAM	-	static random access memory
Memory Size	-	1 Mbit	1 Mbit	1 Mbit	1 Mbit	1 Mbit	-	-
Organization	-	128 k x 8	128 k x 8	128 k x 8	128 k x 8	128 k x 8	-	-
Maximum Clock Frequency	-	20 MHz	20 MHz	20 MHz	20 MHz	20 MHz	-	-
Interface Type	-	Serial, 4-Wire, SDI, SPI	Serial, 4-Wire, SDI, SPI	Serial, 4-Wire, SDI, SPI	Serial, 4-Wire, SDI, SPI	Serial, 4-Wire, SDI, SPI	-	Serial, 4-Wire, SDI, SPI
Supply Voltage - Max	-	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	-	-
Supply Voltage - Min	-	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	-	-
Supply Current - Max	-	10 mA	10 mA	10 mA	10 mA	10 mA	-	-
Minimum Operating Temperature	-	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	-	-
Maximum Operating Temperature	-	+ 85 C	+ 85 C	+ 125 C	+ 125 C	+ 125 C	-	-
Mounting Style	-	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	Through Hole	-	-
Package / Case	-	TSSOP-8	TSSOP-8	TSSOP-8	SOIC-8	PDIP-8	-	-
Memory Type	-	SDR	SDR	SDR	SDR	SDR	-	-
Type	-	Synchronous	Synchronous	Synchronous	Synchronous	Synchronous	-	-
Unit Weight	-	0.005573 oz	0.005573 oz	0.005573 oz	0.019048 oz	0.032805 oz	-	-

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