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1N4936G

Description
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size138KB,2 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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1N4936G Overview

1 A, 400 V, SILICON, SIGNAL DIODE, DO-41

CE
CHENYI ELECTRONICS
1N4933G THRU 1N4937G
FAST RECOVERY GLASS PASSIVATED RECTIFIER
Reverse Voltage - 50 to 600 Volts
Forward Current - 1.0Ampere
FEATURES
. Fat switching
. Low leakage current
. Low forward voltage drop
. High current capability
. Glass passivated junction
. High reliability capability
MECHANICAL DATA
.
Case:
JEDEC DO-41 molded plastic body
.
Terminals:
Plated axial lead, solderable per MIL-STD-750,method 2026
.
Polarity:
Color band denotes cathode end
.
Mounting Position:
Any
.
Weight:
0.012 ounce, 0.34 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherwise specified,Single phase,half wave 60Hz,resistive or inductive)
load. For capacitive load,derate current by 20%)
Symbols 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Macimum average forward rectified
current 0.375"(9.5mm)lead length at
T
A
=75
Peak forward surge current 8.3ms
sing-wave superimposed on rated load
(JEDEC method)
T
A
=75
Maximum instantaneous forward voltage at 1.0 A
Maximum DC Rreverse Current at rated DC
blocking voltage
Maximum full load reverse current full cycle
average. 0.375"(9.5mm)lead length at
TL=55
Maximum reverse recovery time(Note 1)
Typical junction Capacitance(Note 2)
Operating and storage temperature range
Trr
150
15.0
-65 to +175
250
500
I
R
100
V
F
1.2
5.0
I
FSM
30.0
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
1.0
400
280
400
600
420
600
Units
Volts
Volts
Volts
Amp
Amps
Volts
A
ns
pF
C
J
T
J
T
STG
Notes:
1.Test conditions:I
F
=1.0A,V
R
=30V
2.Measured at 1MHz and applied reverse voltage of 4.0V Volts.
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 2

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Description 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE

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