1N4935G datasheet, PDF - EEWORLD Datasheet

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1N4935G: Description1 A, 200 V, SILICON, SIGNAL DIODE, DO-41; Categorysemiconductor Discrete semiconductor; File Size138KB，2 Pages; ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.

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1 A, 200 V, SILICON, SIGNAL DIODE, DO-41

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CE

CHENYI ELECTRONICS

1N4933G THRU 1N4937G

FAST RECOVERY GLASS PASSIVATED RECTIFIER

Reverse Voltage - 50 to 600 Volts

Forward Current - 1.0Ampere

FEATURES

. Fat switching

. Low leakage current

. Low forward voltage drop

. High current capability

. Glass passivated junction

. High reliability capability

MECHANICAL DATA

.

Case:

JEDEC DO-41 molded plastic body

.

Terminals:

Plated axial lead, solderable per MIL-STD-750,method 2026

.

Polarity:

Color band denotes cathode end

.

Mounting Position:

Any

.

Weight:

0.012 ounce, 0.34 gram

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Ratings at 25

ambient temperature unless otherwise specified,Single phase,half wave 60Hz,resistive or inductive)

load. For capacitive load,derate current by 20%)

Symbols 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Macimum average forward rectified

current 0.375"(9.5mm)lead length at

T

A

=75

Peak forward surge current 8.3ms

sing-wave superimposed on rated load

(JEDEC method)

T

A

=75

Maximum instantaneous forward voltage at 1.0 A

Maximum DC Rreverse Current at rated DC

blocking voltage

Maximum full load reverse current full cycle

average. 0.375"(9.5mm)lead length at

TL=55

Maximum reverse recovery time(Note 1)

Typical junction Capacitance(Note 2)

Operating and storage temperature range

Trr

150

15.0

-65 to +175

250

500

I

R

100

V

F

1.2

5.0

I

FSM

30.0

V

RRM

V

RMS

V

DC

I

(AV)

50

35

50

100

70

100

200

140

200

1.0

400

280

400

600

420

600

Units

Volts

Amp

Amps

Volts

A

ns

pF

C

J

T

J

T

STG

Notes:

1.Test conditions:I

F

=1.0A,V

R

=30V

2.Measured at 1MHz and applied reverse voltage of 4.0V Volts.

Page 1 of 2

1N4935G Related Products

	1N4935G	IN4937	1N4933G	1N4934G	1N4936G	1N4937G
Description	1 A, 200 V, SILICON, SIGNAL DIODE, DO-41	SIGNAL DIODE	SIGNAL DIODE	1 A, 100 V, SILICON, SIGNAL DIODE, DO-41	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	SIGNAL DIODE

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