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SF16C06C-G

Description
Glass Passivated Super Fast Recovery Rectifier
CategoryDiscrete semiconductor    diode   
File Size44KB,2 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
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SF16C06C-G Overview

Glass Passivated Super Fast Recovery Rectifier

SF16C06C-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerComchip Technology
package instructionR-PSFM-T3
Reach Compliance Codecompli
ECCN codeEAR99
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.5 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current200 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage600 V
Maximum reverse current10 µA
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Glass Passivated Super Fast Recovery Rectifier
SF16C01C-G THRU SF16C06C-G
Voltage Range 50 to 600 V
Current 16.0 Ampere
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Mechanical Data
Case: Molded plastic TO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity:Color band denotes cathode
Mounting position: Any
Weight: 2.24 grams
TO-220AB
.113(2.87)
.103(2.62)
.185(4.70)
.175(4.44)
MAX.412(10.5)
DIA
.154(3.91)
.148(3.74)
.594(15.1)
.587(14.9)
PIN
1 2 3
.27(6.86)
.23(5.84)
.055(1.40)
.045(1.14)
.16(4.06)
.14(3.56)
.56(14.22)
.53(13.46)
.037(0.94)
.027(0.68)
1
3
case
2
.105(2.67)
.095(2.41)
.06(1.52)
.05(1.27)
.11(2.79)
.10(2.54)
.025(0.64)
.014(0.35)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=100
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 8.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
SF
SF
SF
SF
SF
SF
UNIT
16C01C-G16C02C-G16C03C-G16C04C-G16C05C-G16C06C-G
50
35
50
100
70
100
200
140
200
16.0
300
210
300
400
280
400
600
420
600
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
200
A
V
F
0.95
10.0
250
35
65
2.2
-55 to +150
1.3
1.5
V
uA
uA
I
R
Trr
C
J
R
JC
T
J
, T
STG
50
nS
pF
o
CW
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
COMCHIP TECHNOLOGY 4115 CLIPPER CT. FREMONT CA 94538 TEL: (510) 657-8671 FAX: (510) 657-8921

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Description Glass Passivated Super Fast Recovery Rectifier Glass Passivated Super Fast Recovery Rectifier Glass Passivated Super Fast Recovery Rectifier Glass Passivated Super Fast Recovery Rectifier Glass Passivated Super Fast Recovery Rectifier Glass Passivated Super Fast Recovery Rectifier
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Maker Comchip Technology Comchip Technology Comchip Technology Comchip Technology Comchip Technology Comchip Technology
package instruction R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Reach Compliance Code compli compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.5 V 0.95 V 1.3 V 0.95 V 0.95 V 1.3 V
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Maximum non-repetitive peak forward current 200 A 200 A 200 A 200 A 200 A 200 A
Number of components 2 2 2 2 2 2
Phase 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 8 A 8 A 8 A 8 A 8 A 8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 600 V 200 V 300 V 50 V 100 V 400 V
Maximum reverse current 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA
Maximum reverse recovery time 0.05 µs 0.035 µs 0.05 µs 0.035 µs 0.035 µs 0.05 µs
surface mount NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
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