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TG2016SBN 16.8000M-PCGNDM0

Description
OSC VCTCXO 16.8000MHZ SNWV SMD
CategoryPassive components   
File Size623KB,2 Pages
ManufacturerEPSON
Websitehttp://www.epsondevice.com
Environmental Compliance
Download Datasheet Parametric View All

TG2016SBN 16.8000M-PCGNDM0 Overview

OSC VCTCXO 16.8000MHZ SNWV SMD

TG2016SBN 16.8000M-PCGNDM0 Parametric

Parameter NameAttribute value
typeVCTCXO
frequency16.8MHz
Function-
outputsine wave
Voltage - Power2.6 V ~ 3.3 V
frequency stability±500ppb
Absolute pulling range (APR)-
Operating temperature-40°C ~ 85°C
Current - Power (maximum)1.4mA
grade-
Installation typesurface mount
Package/casing4-SMD, no leads
size/dimensions0.079" long x 0.063" wide (2.00mm x 1.60mm)
Height - Installation (maximum)0.032"(0.80mm)
Current - Power (disabled) (maximum)-
Crystal oscillator
VC-TCXO/TCXO
HIGH STABILITY
Product Number (Please contact us)
TG2016SBN : X1G004691xxxxxx
TG2520SBN : X1G005151xxxxxx
TG2016SBN
/
TG2520SBN
•Output
frequency
:
13 MHz to 55MHz
•Supply
voltage
:
1.8 V Typ./ 2.8 V Typ./ 3.0 V Typ./ 3.3 V Typ.
•Frequency
/ temperature characteristics
:
±0.5
× 10
-6
Max. (-40
°C
to +85
°C)
:
±2.0
× 10
-6
Max. (-40
°C
to +85
°C)
•External
dimensions
:
2.0 × 1.6 × 0.73 mm / 2.5 × 2.0 × 0.8 mm
•Applications
:
GPS, RF
Wireless communication devices
(CDMA, WCDMA, LTE, WiMAX, other)
•Features
:
High stability, Low noise
TG2016SBN
(2.0 × 1.6 × 0.73 mm)
Actual size
TG2016SBN
TG2520SBN
TG2520SBN
(2.5 × 2.0 × 0.8 mm)
Specifications (characteristics)
Item
Output frequency range
Supply voltage
Storage temperature
Operating temperature
Frequency tolerance
Frequency/temperature
characteristics
Frequency/load coefficient
Frequency/voltage coefficient
Frequency aging
Symbol
f
0
V
CC
T_stg
T_use
f_tol
f
0
-T
C
f
0
-Load
f
0
-V
CC
f_age
TCXO
13 MHz to 55MHz
16 MHz, 16.368 MHz, 16.369 MHz, 16.384 MHz, 16.8 MHz,
19.2 MHz, 20 MHz, 26 MHz, 27MHz, 28.974 MHz, 30 MHz,
32 MHz, 37.4 MHz, 38.4 MHz, 39 MHz and 40 MHz
1.8 V
±0.1
V / 2.8 V
±5
% / 3.0 V
±5
% / 3.3 V
±5
%
-40 ° to +90 °
C
C
G: -40
°C
to +85
°C
±1.5 ×
10
-6
Max.
C:
±0.5 ×
10
-6
Max. / G: -40
°C
to +85
°C
F:
±2.0 ×
10
-6
Max. / G: -40
°C
to +85
°C
±0.1 ×
10
-6
Max.
±0.1 ×
10
-6
Max.
±0.5 ×
10
-6
Max.
±1.5 ×
10
-6
Max.
1.2 mA Max.
1.4 mA Max.
1.5 mA Max.
1.8 mA Max.
2.0 mA Max.
2.2 mA Max.
500 kΩ Min.
±8.0 ×
10
-6
to
±12.0 ×
10
-6
-
-
-
GND level (DC cut)
Peak to Peak
T=0 at 90% Vcc
DC cut capacitor = 0.01
µF
, Vc function[Vc] (Symbol table)
Voltage
VC-TCXO
Conditions / Remarks
Standard frequency
Supply voltage range :1.7 V to 3.63 V
Storage as single product.
After reflow, +25
°C
Standard stability version
10 kΩ // 10 pF
±10
%
V
CC
±
5 %
+25
°C,
First year, 13 MHz≤ f
0
≤20
MHz,
26 MHz≤ f
0
≤40
MHz
+25
°C
,First year, 20 MHz< f
0
<26 MHz
40 MHz< f
0
≤55
MHz
13 MHz≤ f
0
<16 MHz
16 MHz≤ f
0
≤27
MHz
27 MHz< f
0
≤36
MHz
36 MHz< f
0
≤40
MHz
40 MHz< f
0
≤52
MHz
52 MHz< f
0
≤55
MHz
V
C
- GND (DC)
B: V
C
=0.9 V
±0.6
V (V
CC
=1.8 V) or
C: V
C
=1.4 V
±1.0
V (V
CC
=2.8 V) or
D: V
C
=1.5 V
±1.0
V (V
CC
=3.0 V) or
E: V
C
=1.65 V
±1.0
V (V
CC
=3.3 V)
Current consumption
I
CC
Input resistance
Frequency control range
Frequency change polarity
Symmetry
Output voltage
Start-up time
Rin
f_cont
-
Positive polarity
SYM
45 % to 55 %
V
PP
0.8 V Min.
t_str
1.0 ms Max.
Load_R
10 kΩ
Output load condition
Load_C
10 pF
*
Note : Please contact us for requirements not listed in this specification.
Product Name
(Standard form)
TG2016 SBN 26.000000MHz
T
C G
N N M
External
TG2016SBN
2.0±0.15
Model(TG2016, TG2520)
Output (S: Clipped sine wave)
Frequency
(Refer to symbol table) Frequency / temperature characteristics (C:
±0.5 ×
10
-6
Max., F:
±2.0 ×
10
-6
Max.)
Operating temperature (G: -40
°C
to +85
°C)
OE function (N: Non)
V
C
function(Refer to symbol table , A: V
C
=any)
Internal identification code (“L”, “M”, “H” is default)
dimensions
(Unit:mm)
Footprint (Recommended)
(Unit:mm)
2.5±0.2
TG2520SBN
2.0±0.2
B
A
(0.38)
1.6±0.15
Marking
C
Marking
(0.25)
0.73±0.07
0.8±0.1
Size
0.5±0.1
#1
#2
(0.75)
#1
C0.15
1.58±0.1
#2
1.18±0.1
0.40±0.1
Pin map
Pin
1
2
3
4
Connection
VC-TCXO
TCXO
V
C
N.C.
GND
OUT
V
CC
C0.20
D
0.6±0.1
A
B
C
D
TG2016SBN
(2.0x1.6mm)
0.75
0.6
1.13
1.65
TG2520SBN
(2.5x2.0mm)
1.0
0.8
1.4
2.1
#4
1.2±0.1
#3
#4
(0.55)
#3
1.5±0.1
To maintain stable operation, provide a 0.01uF to 0.1uF by-pass
capacitor at a location as near as possible to the power source
terminal of the crystal product (between V
CC
- GND).
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