EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

TSM9N90ECI C0G

Description
MOSFET N-CHANNEL 900V 9A ITO220
Categorysemiconductor    Discrete semiconductor   
File Size457KB,9 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

TSM9N90ECI C0G Overview

MOSFET N-CHANNEL 900V 9A ITO220

TSM9N90ECI C0G Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)900V
Current - Continuous Drain (Id) at 25°C9A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs1.4 ohms @ 4.5A, 10V
Vgs (th) (maximum value) when different Id4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)72nC @ 10V
Vgs (maximum value)±30V
Input capacitance (Ciss) at different Vds (maximum value)2470pF @ 25V
FET function-
Power dissipation (maximum)89W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Supplier device packagingITO-220
Package/casingTO-220-3 fully encapsulated, isolation tab

TSM9N90ECI C0G Related Products

TSM9N90ECI C0G TSM9N90ECZ C0G
Description MOSFET N-CHANNEL 900V 9A ITO220 MOSFET N-CHANNEL 900V 9A TO220
FET type N channel N channel
technology MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) 900V 900V
Current - Continuous Drain (Id) at 25°C 9A(Tc) 9A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 10V 10V
Rds On (maximum value) when different Id, Vgs 1.4 ohms @ 4.5A, 10V 1.4 ohms @ 4.5A, 10V
Vgs (th) (maximum value) when different Id 4V @ 250µA 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 72nC @ 10V 72nC @ 10V
Vgs (maximum value) ±30V ±30V
Input capacitance (Ciss) at different Vds (maximum value) 2470pF @ 25V 2470pF @ 25V
Power dissipation (maximum) 89W(Tc) 89W(Tc)
Operating temperature -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ)
Installation type Through hole Through hole
Supplier device packaging ITO-220 TO-220
Package/casing TO-220-3 fully encapsulated, isolation tab TO-220-3

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号