|
TSM9N90ECI C0G |
TSM9N90ECZ C0G |
Description |
MOSFET N-CHANNEL 900V 9A ITO220 |
MOSFET N-CHANNEL 900V 9A TO220 |
FET type |
N channel |
N channel |
technology |
MOSFET (metal oxide) |
MOSFET (metal oxide) |
Drain-source voltage (Vdss) |
900V |
900V |
Current - Continuous Drain (Id) at 25°C |
9A(Tc) |
9A(Tc) |
Drive voltage (maximum Rds On, minimum Rds On) |
10V |
10V |
Rds On (maximum value) when different Id, Vgs |
1.4 ohms @ 4.5A, 10V |
1.4 ohms @ 4.5A, 10V |
Vgs (th) (maximum value) when different Id |
4V @ 250µA |
4V @ 250µA |
Gate charge (Qg) at different Vgs (maximum value) |
72nC @ 10V |
72nC @ 10V |
Vgs (maximum value) |
±30V |
±30V |
Input capacitance (Ciss) at different Vds (maximum value) |
2470pF @ 25V |
2470pF @ 25V |
Power dissipation (maximum) |
89W(Tc) |
89W(Tc) |
Operating temperature |
-55°C ~ 150°C(TJ) |
-55°C ~ 150°C(TJ) |
Installation type |
Through hole |
Through hole |
Supplier device packaging |
ITO-220 |
TO-220 |
Package/casing |
TO-220-3 fully encapsulated, isolation tab |
TO-220-3 |