ES1DLHM2G datasheet, PDF - EEWORLD Datasheet

ES1DLHM2G: DescriptionDIODE GEN PURP 200V 1A SUB SMA; Categorysemiconductor Discrete semiconductor; File Size355KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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DIODE GEN PURP 200V 1A SUB SMA

Parameter Name	Attribute value
Diode type	standard
Voltage - DC Reverse (Vr) (Maximum)	200V
Current - average rectification (Io)	1A
Voltage at different If - Forward (Vf	950mV @ 1A
speed	Fast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)	35ns
Current at different Vr - Reverse leakage current	5µA @ 200V
Capacitance at different Vr, F	10pF @ 4V，1MHz
Installation type	surface mount
Package/casing	DO-219AB
Supplier device packaging	Sub SMA
Operating Temperature - Junction	-55°C ~ 150°C

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