VS-65EPS16LHM3, VS-65APS16LHM3
www.vishay.com
Vishay Semiconductors
High Voltage Input Rectifier Diode, 65 A
FEATURES
• Very low forward voltage drop
• Glass passivated pellet chip junction
2
1
1
2
3
3
• AEC-Q101 qualified meets JESD 201 class 1A
whisker test
TO-247AD 3L
Base cathode
2
TO-247AD 2L
Base cathode
2
• Flexible solution for reliable AC power
rectification
• High surge, low V
F
rugged blocking diode for DC charging
stations
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
Cathode
3
Anode
1
Anode
3
Anode
APPLICATIONS
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
VS-65EPS16LHM3
VS-65APS16LHM3
DESCRIPTION
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
FSM
T
J
max.
Package
Circuit configuration
65 A
1600 V
1.17 V
950 A
150 °C
TO-247AD 2L, TO-247AD 3L
Single
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
30 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
65
1600
950
1.0
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-65EPS16LHM3
VS-65APS16LHM3
V
RSM
, MAXIMUM
V
RRM
, MAXIMUM
NON-REPETITIVE PEAK REVERSE
PEAK REVERSE VOLTAGE
VOLTAGE
V
V
1600
1600
1700
1700
I
RRM
AT 150 °C
mA
1.3
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 120 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
65
800
950
3190
4510
45 100
A
2
s
A
2
s
A
UNITS
Revision: 11-Oct-2018
Document Number: 96475
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-65EPS16LHM3, VS-65APS16LHM3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
65 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= rated V
RRM
VALUES
1.17
3.98
0.74
0.1
1.3
UNITS
V
m
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, junction to ambient
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-247AD 2L
Case style TO-247AD 3L
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth, and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +150
0.25
40
0.2
6
0.21
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
65EPS16LH
65APS16LH
Maximum Allowable Case Temperature (°C)
150
R
thJC
(DC) = 0.25 °C/W
140
130
120
110
120°
100
Ø
Maximum Allowable Case Temperature (°C)
150
R
thJC
(DC) = 0.25 °C/W
140
130
120
110
100
90
0
20
40
60
80
100
120
30°
Ø
Conduction Angle
120° 180°
60° 90°
DC°
30°
60°
90°
180°
Conduction angle
90
0
10
20
30
40
50
60
70
Average On-State Current (A)
Fig. 1 - Current Rating Characteristics
Average On-State Current (A)
Fig. 2 - Current Rating Characteristics
Revision: 11-Oct-2018
Document Number: 96475
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-65EPS16LHM3, VS-65APS16LHM3
www.vishay.com
Vishay Semiconductors
Peak Half Sine Wave Forward Current (A)
900
800
700
600
500
400
300
200
1
10
100
VS-60EPS..
Series
At any rated load condition and with
rated V
rrm
applied following
surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
Max. Average On-State Power Loss (W)
100
180°
120°
90°
60°
30°
RMS limit
80
60
40
Ø
Conduction Angle
20
T
J
= 150 °C
0
0
10
20
30
40
50
60
70
Average On -
State
Current (A)
Fig. 3 - Forward Power Loss Characteristics
Number of Equal Amplitude
Half Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave Forward Current (A)
Max. Average On-State Power Loss (W)
140
120
100
80
60
40
20
0
0
20
40
60
80
100
RMS limit
180°
120°
90°
60°
30°
DC
1000
900
800
700
600
500
400
300
200
100
0.01
VS-60EPS..
Series
0.1
1
10
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
rrm
reapplied
Ø
Conduction Angle
T
J
= 150 °C
Average On -
State
Current (A)
Fig. 4 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
I
F
- Instantaneous Forward Current (A)
1000
T
J
= 150 °C
100
10
T
J
= 25 °C
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
F
- Forward Voltage Drop (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 11-Oct-2018
Document Number: 96475
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-65EPS16LHM3, VS-65APS16LHM3
www.vishay.com
Vishay Semiconductors
Z
thJC
- Transient Thermal Impedance (°C/W)
1
0.25
0.33
0.17
0.1
0.5
Steady state
value
(DC operation)
0.08
0.01
Single
pulse
0.001
0.0001
0.001
0.01
0.1
1
10
Square
Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
-
-
-
65
2
E
3
P
4
S
5
16
6
L
7
H
8
M3
9
Vishay Semiconductors product
Current rating (65 = 65 A)
Circuit configuration:
E = single, 2 pins
A = single, 3 pins
4
5
-
-
Package:
P = TO-247AD
Type of silicon:
S = standard recovery rectifier
6
7
8
9
-
-
-
-
Voltage code x 100 = V
RRM
L = long leads
H = AEC-Q101 qualified
Environmental digit:
16 = 1600 V
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-65EPS16LHM3
VS-65APS16LHM3
QUANTITY PER T/R
25
25
MINIMUM ORDER QUANTITY
500
500
PACKAGING DESCRIPTION
Antistatic plastic tubes
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247AD 2L
TO-247AD 3L
TO-247AD 2L
TO-247AD 3L
www.vishay.com/doc?95536
www.vishay.com/doc?95626
www.vishay.com/doc?95648
www.vishay.com/doc?95007
Revision: 11-Oct-2018
Document Number: 96475
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247AD 2L
DIMENSIONS
in millimeters and inches
(3)
B
(2) R/2
Q
2xR
(2)
1, 2
(5) L1
C
L
See
view B
A
(4)
E1
0.01
M
D B
M
View A - A
2 x b2
2xb
0.10
M
C A
M
(b1, b3)
C
2x e
A1
3
E
S
A2
A
D2
A
(6) F P
Ø K
M
D B
M
A
(Datum B)
F P1
D
D
Thermal pad
4
D1 (4)
Plating
Base metal
D D
(c)
c1
(b, b2)
(4)
Section
C - C, D - D
C
C
View B
SYMBOL
A
A1
A2
b
b1
b2
b3
c
c1
D
D1
D2
MILLIMETERS
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
0.38
0.38
19.71
13.08
0.51
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.34
0.89
0.84
20.70
-
1.35
INCHES
MIN.
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.015
0.015
0.776
0.515
0.020
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.092
0.035
0.033
0.815
-
0.053
NOTES
SYMBOL
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
MILLIMETERS
MIN.
15.29
13.46
5.46 BSC
0.254
19.81
3.71
3.56
-
5.31
4.52
20.32
4.29
3.66
6.98
5.69
5.49
MAX.
15.87
-
INCHES
MIN.
0.602
0.53
0.010
0.780
0.146
0.14
-
0.209
0.178
0.800
0.169
0.144
0.275
0.224
0.216
MAX.
0.625
-
NOTES
3
0.215 BSC
3
4
R
S
5.51 BSC
0.217 BSC
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5M-1994
(2)
Contour of slot optional
(3)
Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4)
Thermal pad contour optional with dimensions D1 and E1
(5)
Lead finish uncontrolled in L1
(6)
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7)
Outline conforms to JEDEC
®
outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 28-May-2018
Document Number: 95536
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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