FP150R12KT4P
EconoPIM™3ModulmitTrench/FeldstoppIGBT4undEmitterControlled4DiodeundNTC/bereits
aufgetragenemThermalInterfaceMaterial
EconoPIM™3modulewithTrench/FieldstopIGBT4andEmitterControlled4diodeandNTC/pre-applied
ThermalInterfaceMaterial
V
CES
= 1200V
I
C nom
= 150A / I
CRM
= 300A
PotentielleAnwendungen
• Hilfsumrichter
• Motorantriebe
• Servoumrichter
ElektrischeEigenschaften
• NiedrigesV
CEsat
• T
vjop
=150°C
• V
CEsat
mitpositivemTemperaturkoeffizienten
MechanischeEigenschaften
• HoheLeistungsdichte
• IntegrierterNTCTemperaturSensor
• Kupferbodenplatte
• Lötverbindungstechnik
• Standardgehäuse
•
Thermisches Interface Material bereits
aufgetragen
PotentialApplications
• Auxiliaryinverters
• Motordrives
• Servodrives
ElectricalFeatures
• LowV
CEsat
• T
vjop
=150°C
• V
CEsat
withpositivetemperaturecoefficient
MechanicalFeatures
• Highpowerdensity
• IntegratedNTCtemperaturesensor
• Copperbaseplate
• Soldercontacttechnology
• Standardhousing
• Pre-appliedThermalInterfaceMaterial
ModuleLabelCode
BarcodeCode128
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
Digit
1-5
6-11
12-19
20-21
22-23
DMX-Code
Datasheet
www.infineon.com
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V3.1
2017-08-21
FP150R12KT4P
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
T
vj
= 25°C
T
H
= 75°C, T
vj max
= 175°C
t
P
= 1 ms
V
CES
1200
150
300
+/-20
min.
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
t
d on
0,16
0,19
0,19
0,07
0,08
0,08
0,42
0,48
0,53
0,10
0,19
0,22
22,0
28,5
30,5
9,80
15,0
17,0
540
5,25
typ.
1,75
2,05
2,10
5,80
1,20
5,0
9,35
0,41
1,0
100
max.
2,10
V
V
V
V
µC
Ω
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
A
0,250 K/W
-40
150
°C
V
A
A
V
I
C nom
I
CRM
V
GES
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
Gate-Schwellenspannung
Gatethresholdvoltage
Gateladung
Gatecharge
InternerGatewiderstand
Internalgateresistor
Eingangskapazität
Inputcapacitance
Rückwirkungskapazität
Reversetransfercapacitance
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
Anstiegszeit,induktiveLast
Risetime,inductiveload
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
Fallzeit,induktiveLast
Falltime,inductiveload
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
Wärmewiderstand,ChipbisKühlkörper
Thermalresistance,junctiontoheatsink
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
I
C
= 150 A, V
GE
= 15 V
I
C
= 150 A, V
GE
= 15 V
I
C
= 150 A, V
GE
= 15 V
I
C
= 5,70 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 150 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 6,8
Ω
I
C
= 150 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 6,8
Ω
I
C
= 150 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 6,8
Ω
I
C
= 150 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 6,8
Ω
6,35
t
r
t
d off
t
f
I
C
= 150 A, V
CE
= 600 V, L
S
= 35 nH
T
vj
= 25°C
V
GE
= ±15 V, di/dt = 1600 A/µs (T
vj
= 150°C) T
vj
= 125°C
R
Gon
= 6,8
Ω
T
vj
= 150°C
I
C
= 150 A, V
CE
= 600 V, L
S
= 35 nH
T
vj
= 25°C
V
GE
= ±15 V, du/dt = 3600 V/µs (T
vj
= 150°C) T
vj
= 125°C
R
Goff
= 6,8
Ω
T
vj
= 150°C
V
GE
≤
15 V, V
CC
= 800 V
V
CEmax
= V
CES
-L
sCE
·di/dt
t
P
≤
10 µs, T
vj
= 150°C
E
on
E
off
I
SC
R
thJH
T
vj op
proIGBT/perIGBT
validwithIFXpre-appliedthermalinterfacematerial
Datasheet
2
V3.1
2017-08-21
FP150R12KT4P
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Dauergleichstrom
ContinuousDCforwardcurrent
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
Grenzlastintegral
I²t-value
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
V
R
= 0 V, t
P
= 10 ms, T
vj
= 150°C
T
vj
= 25°C
V
RRM
I
F
I
FRM
I²t
min.
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
F
1200
150
300
3050
2950
typ.
1,70
1,65
1,65
57,0
73,0
78,0
9,80
19,5
22,0
2,60
5,20
6,20
max.
2,15
V
V
V
A
A
A
µC
µC
µC
mJ
mJ
mJ
0,407 K/W
-40
150
°C
V
A
A
A²s
A²s
CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
Rückstromspitze
Peakreverserecoverycurrent
Sperrverzögerungsladung
Recoveredcharge
AbschaltenergieproPuls
Reverserecoveryenergy
Wärmewiderstand,ChipbisKühlkörper
Thermalresistance,junctiontoheatsink
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
I
F
= 150 A, V
GE
= 0 V
I
F
= 150 A, V
GE
= 0 V
I
F
= 150 A, V
GE
= 0 V
I
F
= 150 A, - di
F
/dt = 1600 A/µs (T
vj
=150°C) T
vj
= 25°C
V
R
= 600 V
T
vj
= 125°C
V
GE
= -15 V
T
vj
= 150°C
I
F
= 150 A, - di
F
/dt = 1600 A/µs (T
vj
=150°C) T
vj
= 25°C
V
R
= 600 V
T
vj
= 125°C
V
GE
= -15 V
T
vj
= 150°C
I
F
= 150 A, - di
F
/dt = 1600 A/µs (T
vj
=150°C) T
vj
= 25°C
V
R
= 600 V
T
vj
= 125°C
V
GE
= -15 V
T
vj
= 150°C
proDiode/perdiode
validwithIFXpre-appliedthermalinterfacematerial
I
RM
Q
r
E
rec
R
thJH
T
vj op
Diode,Gleichrichter/Diode,Rectifier
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
T
vj
= 25°C
V
RRM
I
FRMSM
I
RMSM
I
FSM
I²t
min.
V
F
I
R
R
thJH
T
vj op
-40
1600
150
150
1600
1400
13000
9800
typ.
1,00
1,00
max.
V
mA
0,356 K/W
150
°C
V
A
A
A
A
A²s
A²s
DurchlassstromGrenzeffektivwertproChip
T
H
= 100°C
MaximumRMSforwardcurrentperchip
GleichrichterAusgangGrenzeffektivstrom
MaximumRMScurrentatrectifieroutput
StoßstromGrenzwert
Surgeforwardcurrent
Grenzlastintegral
I²t-value
T
H
= 100°C
t
p
= 10 ms, T
vj
= 25°C
t
p
= 10 ms, T
vj
= 150°C
t
p
= 10 ms, T
vj
= 25°C
t
p
= 10 ms, T
vj
= 150°C
CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
Sperrstrom
Reversecurrent
Wärmewiderstand,ChipbisKühlkörper
Thermalresistance,junctiontoheatsink
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
T
vj
= 150°C, I
F
= 150 A
T
vj
= 150°C, V
R
= 1600 V
proDiode/perdiode
validwithIFXpre-appliedthermalinterfacematerial
Datasheet
3
V3.1
2017-08-21
FP150R12KT4P
IGBT,Brems-Chopper/IGBT,Brake-Chopper
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
T
vj
= 25°C
T
H
= 90°C, T
vj max
= 175°C
t
P
= 1 ms
V
CES
1200
100
200
+/-20
min.
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
t
d on
0,15
0,16
0,16
0,03
0,04
0,04
0,31
0,35
0,37
0,10
0,16
0,21
6,10
9,00
9,70
6,10
9,20
10,0
360
5,25
typ.
1,75
2,05
2,10
5,80
0,80
7,5
6,30
0,27
1,0
100
max.
2,10
V
V
V
V
µC
Ω
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
A
0,308 K/W
-40
150
°C
V
A
A
V
I
C nom
I
CRM
V
GES
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
Gate-Schwellenspannung
Gatethresholdvoltage
Gateladung
Gatecharge
InternerGatewiderstand
Internalgateresistor
Eingangskapazität
Inputcapacitance
Rückwirkungskapazität
Reversetransfercapacitance
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
Anstiegszeit,induktiveLast
Risetime,inductiveload
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
Fallzeit,induktiveLast
Falltime,inductiveload
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
Wärmewiderstand,ChipbisKühlkörper
Thermalresistance,junctiontoheatsink
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
I
C
= 100 A, V
GE
= 15 V
I
C
= 100 A, V
GE
= 15 V
I
C
= 100 A, V
GE
= 15 V
I
C
= 3,80 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 100 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 1,6
Ω
I
C
= 100 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 1,6
Ω
I
C
= 100 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 1,6
Ω
I
C
= 100 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 1,6
Ω
6,35
t
r
t
d off
t
f
I
C
= 100 A, V
CE
= 600 V, L
S
= 35 nH
T
vj
= 25°C
V
GE
= ±15 V, di/dt = 2300 A/µs (T
vj
= 150°C) T
vj
= 125°C
R
Gon
= 1,6
Ω
T
vj
= 150°C
I
C
= 100 A, V
CE
= 600 V, L
S
= 35 nH
T
vj
= 25°C
V
GE
= ±15 V, du/dt = 3700 V/µs (T
vj
= 150°C) T
vj
= 125°C
R
Goff
= 1,6
Ω
T
vj
= 150°C
V
GE
≤
15 V, V
CC
= 800 V
V
CEmax
= V
CES
-L
sCE
·di/dt
t
P
≤
10 µs, T
vj
= 150°C
E
on
E
off
I
SC
R
thJH
T
vj op
proIGBT/perIGBT
validwithIFXpre-appliedthermalinterfacematerial
Datasheet
4
V3.1
2017-08-21
FP150R12KT4P
Diode,Brems-Chopper/Diode,Brake-Chopper
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Dauergleichstrom
ContinuousDCforwardcurrent
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
Grenzlastintegral
I²t-value
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
V
R
= 0 V, t
P
= 10 ms, T
vj
= 150°C
T
vj
= 25°C
V
RRM
I
F
I
FRM
I²t
min.
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
F
1200
50
100
560
475
typ.
1,70
1,65
1,65
76,0
77,0
77,0
5,70
9,40
10,5
2,00
3,50
3,80
max.
2,15
V
V
V
A
A
A
µC
µC
µC
mJ
mJ
mJ
0,810 K/W
-40
150
°C
V
A
A
A²s
A²s
CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
Rückstromspitze
Peakreverserecoverycurrent
Sperrverzögerungsladung
Recoveredcharge
AbschaltenergieproPuls
Reverserecoveryenergy
Wärmewiderstand,ChipbisKühlkörper
Thermalresistance,junctiontoheatsink
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
I
F
= 50 A, V
GE
= 0 V
I
F
= 50 A, V
GE
= 0 V
I
F
= 50 A, V
GE
= 0 V
I
F
= 50 A, - di
F
/dt = 2300 A/µs (T
vj
=150°C)
V
R
= 600 V
V
GE
= 15 V
I
F
= 50 A, - di
F
/dt = 2300 A/µs (T
vj
=150°C)
V
R
= 600 V
V
GE
= 15 V
I
F
= 50 A, - di
F
/dt = 2300 A/µs (T
vj
=150°C)
V
R
= 600 V
V
GE
= 15 V
I
RM
Q
r
E
rec
R
thJH
T
vj op
proDiode/perdiode
validwithIFXpre-appliedthermalinterfacematerial
NTC-Widerstand/NTC-Thermistor
CharakteristischeWerte/CharacteristicValues
Nennwiderstand
Ratedresistance
AbweichungvonR100
DeviationofR100
Verlustleistung
Powerdissipation
B-Wert
B-value
B-Wert
B-value
B-Wert
B-value
T
NTC
= 25°C
T
NTC
= 100°C, R
100
= 493
Ω
T
NTC
= 25°C
R
2
= R
25
exp [B
25/50
(1/T
2
- 1/(298,15 K))]
R
2
= R
25
exp [B
25/80
(1/T
2
- 1/(298,15 K))]
R
2
= R
25
exp [B
25/100
(1/T
2
- 1/(298,15 K))]
R
25
∆R/R
P
25
B
25/50
B
25/80
B
25/100
3375
3411
3433
-5
min.
typ.
5,00
5
20,0
max.
kΩ
%
mW
K
K
K
AngabengemäßgültigerApplicationNote.
Specificationaccordingtothevalidapplicationnote.
Datasheet
5
V3.1
2017-08-21
Linux and Android
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