PHOTOTRANSISTOR 3MM 935NM NPN
Parameter Name | Attribute value |
Voltage - collector-emitter breakdown (maximum) | 30V |
Current - Collector (Ic) (Maximum) | 3mA |
Current - Dark (Id) (maximum value) | 100nA |
wavelength | 935nm |
perspective | - |
Power - Max | 100mW |
Installation type | Through hole |
towards | top view |
Operating temperature | -40°C ~ 100°C(TA) |
Package/casing | T-1 |
OP506C | OP535A | OP506B | OP506W | OP506A | OP705A | OP505W | OP505C | OP535B | OP505D | |
---|---|---|---|---|---|---|---|---|---|---|
Description | PHOTOTRANSISTOR 3MM 935NM NPN | PHOTODARLINGTON SILICON NPN T-1 | PHOTOTRANSISTOR 3MM 935NM NPN | PHOTOTRANSMITTER SILICON NPN T-1 | PHOTOTRANSISTOR 3MM 935NM NPN | PHOTOTRANSISTR NPN W/RES T-1 | PHOTOTRANSMITTER SILICON NPN T-1 | PHOTOTRANSISTOR SILICON NPN T-1 | PHOTODARLINGTON SILICON NPN T-1 | PHOTOTRANSISTOR SILICON NPN T-1 |
Voltage - collector-emitter breakdown (maximum) | 30V | 15V | 30V | 30V | 30V | 30V | 30V | 30V | 15V | 30V |
Current - Collector (Ic) (Maximum) | 3mA | 32mA | 5.95mA | 100µA | 5.95mA | 30mA | 100µA | 3mA | 32mA | 3mA |
Current - Dark (Id) (maximum value) | 100nA | 100nA | 100nA | 100nA | 100nA | 100nA | 100nA | 100nA | 100nA | 100nA |
wavelength | 935nm | 935nm | 935nm | 935nm | 935nm | 935nm | 935nm | 935nm | 935nm | 935nm |
Power - Max | 100mW | 100mW | 100mW | 100mW | 100mW | 100mW | 100mW | 100mW | 100mW | 100mW |
Installation type | Through hole | Through hole | Through hole | Through hole | Through hole | Through hole | Through hole | Through hole | Through hole | Through hole |
towards | top view | top view | top view | top view | top view | top view | top view | top view | top view | top view |
Operating temperature | -40°C ~ 100°C(TA) | -40°C ~ 100°C(TA) | -40°C ~ 100°C(TA) | -40°C ~ 100°C(TA) | -40°C ~ 100°C(TA) | -40°C ~ 100°C(TA) | -40°C ~ 100°C(TA) | -40°C ~ 100°C(TA) | -40°C ~ 100°C(TA) | -40°C ~ 100°C(TA) |
Package/casing | T-1 | T-1 | T-1 | T-1 | T-1 | T-1 | T-1 | T-1 | T-1 | T-1 |