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OP506C

Description
PHOTOTRANSISTOR 3MM 935NM NPN
CategoryThe sensor   
File Size2MB,10 Pages
ManufacturerTT Electronics
Environmental Compliance
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OP506C Overview

PHOTOTRANSISTOR 3MM 935NM NPN

OP506C Parametric

Parameter NameAttribute value
Voltage - collector-emitter breakdown (maximum)30V
Current - Collector (Ic) (Maximum)3mA
Current - Dark (Id) (maximum value)100nA
wavelength935nm
perspective-
Power - Max100mW
Installation typeThrough hole
towardstop view
Operating temperature-40°C ~ 100°C(TA)
Package/casingT-1

OP506C Related Products

OP506C OP535A OP506B OP506W OP506A OP705A OP505W OP505C OP535B OP505D
Description PHOTOTRANSISTOR 3MM 935NM NPN PHOTODARLINGTON SILICON NPN T-1 PHOTOTRANSISTOR 3MM 935NM NPN PHOTOTRANSMITTER SILICON NPN T-1 PHOTOTRANSISTOR 3MM 935NM NPN PHOTOTRANSISTR NPN W/RES T-1 PHOTOTRANSMITTER SILICON NPN T-1 PHOTOTRANSISTOR SILICON NPN T-1 PHOTODARLINGTON SILICON NPN T-1 PHOTOTRANSISTOR SILICON NPN T-1
Voltage - collector-emitter breakdown (maximum) 30V 15V 30V 30V 30V 30V 30V 30V 15V 30V
Current - Collector (Ic) (Maximum) 3mA 32mA 5.95mA 100µA 5.95mA 30mA 100µA 3mA 32mA 3mA
Current - Dark (Id) (maximum value) 100nA 100nA 100nA 100nA 100nA 100nA 100nA 100nA 100nA 100nA
wavelength 935nm 935nm 935nm 935nm 935nm 935nm 935nm 935nm 935nm 935nm
Power - Max 100mW 100mW 100mW 100mW 100mW 100mW 100mW 100mW 100mW 100mW
Installation type Through hole Through hole Through hole Through hole Through hole Through hole Through hole Through hole Through hole Through hole
towards top view top view top view top view top view top view top view top view top view top view
Operating temperature -40°C ~ 100°C(TA) -40°C ~ 100°C(TA) -40°C ~ 100°C(TA) -40°C ~ 100°C(TA) -40°C ~ 100°C(TA) -40°C ~ 100°C(TA) -40°C ~ 100°C(TA) -40°C ~ 100°C(TA) -40°C ~ 100°C(TA) -40°C ~ 100°C(TA)
Package/casing T-1 T-1 T-1 T-1 T-1 T-1 T-1 T-1 T-1 T-1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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