APT5022BNG datasheet, PDF - EEWORLD Datasheet

APT5022BNG: DescriptionMOSFET N-CH 500V 27A TO247AD; Categorysemiconductor Discrete semiconductor; File Size51KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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APT5022BNG Overview

MOSFET N-CH 500V 27A TO247AD

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	500V
Current - Continuous Drain (Id) at 25°C	27A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	10V
Rds On (maximum value) when different Id, Vgs	220 milliohms @ 13.5A, 10V
Vgs (th) (maximum value) when different Id	4V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)	210nC @ 10V
Vgs (maximum value)	±30V
Input capacitance (Ciss) at different Vds (maximum value)	3500pF @ 25V
FET function	-
Power dissipation (maximum)	360W（Tc）
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	Through hole
Supplier device packaging	TO-247AD
Package/casing	TO-247-3

	APT5022BNG	APT5020BN	APT5022BN
Description	MOSFET N-CH 500V 27A TO247AD	MOSFET N-CH 500V 28A TO247AD	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Reach Compliance Code	-	unknown	compliant
Configuration	-	SINGLE WITH BUILT-IN DIODE	Single
Maximum drain current (Abs) (ID)	-	28 A	27 A
FET technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	-	150 °C	150 °C
Polarity/channel type	-	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	-	360 W	360 W
surface mount	-	NO	NO

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