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FFP12UP20DNTU

Description
DIODE ARRAY GP 200V 6A TO220
Categorysemiconductor    Discrete semiconductor   
File Size163KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FFP12UP20DNTU Overview

DIODE ARRAY GP 200V 6A TO220

FFP12UP20DNTU Parametric

Parameter NameAttribute value
Diode configuration1 pair of common cathodes
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)200V
Current - average rectification (Io) (per diode)6A
Voltage at different If - Forward (Vf1.15V @ 6A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)35ns
Current at different Vr - Reverse leakage current100µA @ 200V
Operating Temperature - Junction-65°C ~ 150°C
Installation typeThrough hole
Package/casingTO-220-3
Supplier device packagingTO-220
FFP12UP20DN Ultrafast Recovery Power Rectifier
February 2006
FFP12UP20DN
Ultrafast Recovery Power Rectifier
Features
• Ultrafast with Soft Recovery : < 35ns (@I
F
= 6A)
• High Reverse Voltage : V
RRM
= 200V
• Enhanced Avalanche Energy Rated
• Planar Construction
Applications
• Output Rectifiers
• Switching Mode Power Supply
• Free-wheeling Diode
• Power Switching Circuits
1
TO-220
1
2
3
1. Anode 2. Cathode 3. Anode
1.Anode 2.Cathode 3.Anode
Absolute Maximum Ratings
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J,
T
STG
(per diode) T
C
= 25°C unless otherwise noted
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
@ T
C
= 125°C
Value
200
200
200
6
60
- 65 to +150
Units
V
V
V
A
A
°C
Thermal Characteristics
Symbol
R
θJC
Parameter
Maximum Thermal Resistance, Junction to Case
Max
3.5
Units
°C/W
Package Marking and Ordering Information
Device Marking
F12UP20DN
Device
FFP12UP20DNTU
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FFP12UP20DN Rev. A
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