From Deep UV to Mid-IR
An ITW Company
Photodiode 100 mm
2
FEATURES
•
Square Active Area
•
•
•
•
Ideal for 190-400 nm Detection
100 % Internal QE
Excellent UV Response
Protective Cover Plate
2
UVG100
Electro-Optical Characteristics at 25 °C
Parameters
Active Area
Responsivity
Shunt Resistance
Reverse Breakdown Voltage, V
R
Capacitance, C
Response Time
Test Conditions
10 mm x 10 mm
@ 254 nm
@ ± 10 mV
I
R
= 1 µA
V
R
= 0 V
RL = 50 Ω, V
R
= 10 V
0.08
20
5
10
10
20
10
Min
Typ
100
0.09
Max
Units
mm
2
A/W
MOhms
Volts
nF
usec
Thermal Parameters
Storage and Operating Temperature Range
Storage Temperature Range
Operating Temperature Range
Maximum Junction Temperature
Lead Soldering Temperature
1
1
Units
-20 ° to 100 °C
-20 ° to 80 °C
100 °C
240 °C
0.08" from case for 10 seconds.
Shipped with temporary cover to protect the photodiode and wire bonds.
Review the Application Note, “Handling Precautions for AXUV, SXUV, and UVG Detectors”, prior to removing cover.
2
Revision May 25, 2018
Page 1 of 2
From Deep UV to Mid-IR
An ITW Company
Photodiode 100 mm
2
UVG100
Typical Photon Responsivity
0.6
Responsivity (A/W)
0.5
0.4
0.3
0.2
0.1
0.0
200
300
400
500
600
700
800
900
1000
1100
Wavelength (nm)
Package Information
Dimensions are in inch [metric] units.
Ordering Information
ODD-UVG-002
UV Enhanced Large Square Photodetector Shipped with Protective Cover
Specifications are subject to change without prior notice.
1260 Calle Suerte, Camarillo, California 93012
Phone: +1 805.499.0335 | Fax: +1 805.499.8108 | sales@optodiode.com | www.optodiode.com
Revision May 25, 2018
Page 2 of 2
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