SDURD1060BTR datasheet, PDF - EEWORLD Datasheet

SDURD1060BTR: DescriptionDIODE GEN PURP 600V DPAK; Categorysemiconductor Discrete semiconductor; File Size366KB，5 Pages; ManufacturerSMC; Websitehttp://www.smc-diodes.com/; Environmental Compliance

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SDURD1060BTR Overview

DIODE GEN PURP 600V DPAK

Parameter Name	Attribute value
Diode type	standard
Voltage - DC Reverse (Vr) (Maximum)	600V
Current - average rectification (Io)	-
Voltage at different If - Forward (Vf	2.5V @ 10A
speed	Fast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)	35ns
Current at different Vr - Reverse leakage current	50µA @ 600V
Capacitance at different Vr, F	-
Installation type	surface mount
Package/casing	TO-252-3, DPak (2 leads + tab), SC-63
Supplier device packaging	DPAK
Operating Temperature - Junction	-55°C ~ 150°C

	SDURD1060BTR
Description	DIODE GEN PURP 600V DPAK
Diode type	standard
Voltage - DC Reverse (Vr) (Maximum)	600V
Voltage at different If - Forward (Vf	2.5V @ 10A
speed	Fast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)	35ns
Current at different Vr - Reverse leakage current	50µA @ 600V
Installation type	surface mount
Package/casing	TO-252-3, DPak (2 leads + tab), SC-63
Supplier device packaging	DPAK
Operating Temperature - Junction	-55°C ~ 150°C

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