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SIT8208AI-8F-33E-32.110000Y

Description
OSC MEMS 32.1100MHZ LVCMOS SMD
CategoryPassive components   
File Size750KB,15 Pages
ManufacturerSiTime
Environmental Compliance
Download Datasheet Parametric View All

SIT8208AI-8F-33E-32.110000Y Overview

OSC MEMS 32.1100MHZ LVCMOS SMD

SIT8208AI-8F-33E-32.110000Y Parametric

Parameter NameAttribute value
typeMEMS (silicon)
frequency32.11MHz
Functionenable/disable
outputLVCMOS
Voltage - Power3.3V
frequency stability±10ppm
Operating temperature-40°C ~ 85°C
Current - Power (maximum)33mA
grade-
Installation typesurface mount
Package/casing4-SMD, no leads
size/dimensions0.276" long x 0.197" wide (7.00mm x 5.00mm)
Height - Installation (maximum)0.039"(1.00mm)
Current - Power (disabled) (maximum)31mA
SiT8208
Ultra Performance Oscillator
The Smart Timing Choice
The Smart Timing Choice
Features
Applications
Any frequency between 1 and 80 MHz accurate to 6 decimal places
100% pin-to-pin drop-in replacement to quartz-based oscillators
Ultra low phase jitter: 0.5 ps (12 kHz to 20 MHz)
Frequency stability as low as ±10 PPM
Industrial or extended commercial temperature range
LVCMOS/LVTTL compatible output
Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Instant samples with
Time Machine II
and
field programmable
oscillators
Outstanding silicon reliability of 2 FIT or 500 million hour MTBF
Pb-free, RoHS and REACH compliant
Ultra short lead time
SATA, SAS, Ethernet, PCI Express, video, WiFi
Computing, storage, networking, telecom, industrial control
Electrical Characteristics
[1]
Parameter
Output Frequency Range
Frequency Stability
Symbol
f
F_stab
Min.
1
-10
-20
-25
-50
First year Aging
10-year Aging
Operating Temperature Range
T_use
F_aging
-1.5
-5
-20
-40
Supply Voltage
Vdd
1.71
2.25
2.52
2.97
Current Consumption
OE Disable Current
Idd
I_OD
Standby Current
I_std
Duty Cycle
Rise/Fall Time
Output Voltage High
Output Voltage Low
Input Voltage High
Input Voltage Low
Input Pull-up Impedance
DC
Tr, Tf
VOH
VOL
VIH
VIL
Z_in
45
90%
70%
2
Typ.
1.8
2.5
2.8
3.3
31
29
1.2
100
Max.
80
+10
+20
+25
+50
+1.5
+5
+70
+85
1.89
2.75
3.08
3.63
33
31
31
30
70
10
55
2
10%
30%
250
Unit
MHz
PPM
PPM
PPM
PPM
PPM
PPM
°C
°C
V
V
V
V
mA
mA
mA
mA
A
A
%
ns
Vdd
Vdd
Vdd
Vdd
kΩ
MΩ
15 pF load, 10% - 90% Vdd
IOH = -6 mA, IOL = 6 mA, (Vdd = 3.3V, 2.8V, 2.5V)
IOH = -3 mA, IOL = 3 mA, (Vdd = 1.8V)
No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V
No load condition, f = 20 MHz, Vdd = 1.8V
Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled
Down
Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down
Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled
Down
Vdd = 1.8 V. ST = GND, output is Weakly Pulled Down
25°C
25°C
Extended Commercial
Industrial
Supply voltages between 2.5V and 3.3V can be supported.
Contact
SiTime
for additional information.
Inclusive of Initial tolerance at 25 °C, and variations over
operating temperature, rated power supply voltage and load
Condition
Frequency Range
Frequency Stability and Aging
Operating Temperature Range
Supply Voltage and Current Consumption
LVCMOS Output Characteristics
Input Characteristics
Pin 1, OE or ST
Pin 1, OE or ST
Pin 1, OE logic high or logic low, or ST logic high
Pin 1, ST logic low
Note:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
SiTime Corporation
Rev. 1.02
990 Almanor Avenue
Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised June 24, 2013
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