AON2801
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AON2801 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
RoHS and Halogen-Free Compliant
Features
V
DS
(V) = -20V
I
D
= -3A
(V
GS
= -4.5V)
R
DS(ON)
< 120mΩ (V
GS
= -4.5V)
R
DS(ON)
< 160mΩ (V
GS
= -2.5V)
R
DS(ON)
< 200mΩ (V
GS
= -1.8V)
DFN 2x2 Package
S1
G1
D2
D1
D2
G1
D1
Top
G2
S2
S1
Bottom
G2
S2
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
C
T
A
=25°C
Power Dissipation
A
Symbol
V
DS
V
GS
T
A
=25°C
T
A
=70°C
I
D
I
DM
T
A
=70°C
P
DSM
T
J
, T
STG
Maximum
-20
±8
-3
-2.3
-15
1.5
0.95
-55 to 150
Units
V
V
A
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
B
B
Maximum Junction-to-Ambient
Symbol
t ≤ 10s
Steady-State
t ≤ 10s
Steady-State
R
θJA
R
θJA
Typ
35
65
120
175
Max
45
85
155
235
Units
°C/W
°C/W
°C/W
°C/W
Rev.3.0: October 2015
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Page 1 of 5
AON2801
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-20V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-3A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=-2.5V, I
D
=-2.6A
V
GS
=-1.8V, I
D
=-1.5A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=-5V, I
D
=-3A
I
S
=-1A,V
GS
=0V
-0.3
-15
100
135
128
160
6
-0.76
-1
540
V
GS
=0V, V
DS
=-10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
90
63
9.5
5
V
GS
=-4.5V, V
DS
=-10V, I
D
=-3A
1.2
1
5
V
GS
=-4.5V, V
DS
=-10V, R
L
=1.5Ω,
R
GEN
=3Ω
I
F
=-3A, dI/dt=100A/µs
40
28.5
46
21
9.1
28
6.5
700
120
170
160
200
-0.55
Min
-20
-1
-5
±100
-1
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Total Gate Charge
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-3A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
-15
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
B. The value of R
θJA
is measured with the device mounted on a minimum pad board with 2oz. Copper, in a still air environment with T
A
=25°C.
The Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
C. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 7111 (Oct 15 2007).
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Rev.3.0: October 2015
www.aosmd.com
Page 2 of 5
AON2801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
-4.5V
12
-3.0V
-2.5V
12
25°C
125°C
6
V
GS
=-1.5V
3
3
15
V
DS
=-5V
9
-I
D
(A)
-2.0V
6
-I
D
(A)
4
9
0
0
1
2
3
-V
DS
(Volts)
Figure 1: On-Region Characteristics
280
240
R
DS(ON)
(mΩ)
200
160
120
80
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=-1.8V
V
GS
=-2.5V
Normalized On-Resistance
On
0
0
1
2
3
4
-V
GS
(Volts)
Figure 2: Transfer Characteristics
1.5
V
GS
=-1.8V
I
D
=-1.5A
1.3
V
GS
=-2.5V
I
D
=-2.6A
V
GS
=-4.5V
I
D
=-3A
1.1
V
GS
=-4.5V
0.9
0.7
-50
-25
0
25
50
75
100
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
-15
1E+01
320
I
D
=-3A
280
240
200
160
120
25°C
80
0
2
4
6
8
125°C
-I
S
(A)
1E+00
12
R
DS(ON)
(mΩ)
1E-01
1E-02
25°C
1E-03
1E-04
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev.3.0: October 2015
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Page 3 of 5
AON2801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=-10V
I
D
=-3A
Capacitance (pF)
800
700
600
500
400
300
200
100
0
0
1
2
3
4
5
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
oss
C
rss
C
iss
4
-V
GS
(Volts)
3
2
1
100.00
T
J(Max)
=150°C
T
A
=25°C
10.00
-I
D
(Amps)
10µs
100µs
1.00
R
DS(ON)
limited
DC
0.01
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
1ms
10ms
0.1s
10s
10000
T
J(Max)
=150°C
T
A
=25°C
1000
Power (W)
100
0.10
10
1
0.000001
0.0001
0.01
1
100
10000
-15
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=85°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
12
0.1
P
D
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
on
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.3.0: October 2015
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