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AO8801

Description
MOSFET P-CH DUAL 8TSSOP
Categorysemiconductor    Discrete semiconductor   
File Size128KB,4 Pages
ManufacturerAOS
Websitehttp://www.aosmd.com
Environmental Compliance
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AO8801 Overview

MOSFET P-CH DUAL 8TSSOP

AO8801 Parametric

Parameter NameAttribute value
FET type2 P-channels (dual)
FET functionstandard
Drain-source voltage (Vdss)20V
Current - Continuous Drain (Id) at 25°C4.7A
Rds On (maximum value) when different Id, Vgs42 milliohms @ 4.7A, 4.5V
Vgs (th) (maximum value) when different Id1V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)17.2nC @ 4.5V
Input capacitance (Ciss) at different Vds (maximum value)1450pF @ 10V
Power - Max1.4W
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Package/casing8-TSSOP (0.173", 4.40mm wide)
Supplier device packaging8-TSSOP
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