M52S128168A-10TG datasheet, PDF

M52S128168A-10TG: DescriptionSynchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54; Categorystorage; File Size1MB，47 Pages; ManufacturerESMT; Websitehttp://www.esmt.com.tw/; Elite Semiconductor Memory Technology Inc. (ESMT) is a professional IC design company founded by Dr. Hu Zhao in June 1998. Its headquarters is located in Hsinchu Science Park, Taiwan. The company's main business includes research, development, manufacturing, sales and related technical services of IC products. It was listed on the Taiwan Stock Exchange in March 2002.

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M52S128168A-10TG Overview

Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54

Parameter Name	Attribute value
Maker	ESMT
Parts packaging code	TSOP2
package instruction	TSOP2,
Contacts	54
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
access mode	FOUR BANK PAGE BURST
Maximum access time	7 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PDSO-G54
length	22.22 mm
memory density	134217728 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	54
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Certification status	Not Qualified
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
width	10.16 mm
Base Number Matches	1

ESMT

Revision History

Revision 1.0 (May. 29, 2007)

-Original

Preliminary

M52S128168A

Elite Semiconductor Memory Technology Inc.

Publication Date: May. 2007

Revision: 1.0

1/47

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