|
IPD05N03LB G |
IPS05N03LB G |
Description |
MOSFET N-CH 30V 90A DPAK |
MOSFET N-CH 30V 90A IPAK |
FET type |
N channel |
N channel |
technology |
MOSFET (metal oxide) |
MOSFET (metal oxide) |
Drain-source voltage (Vdss) |
30V |
30V |
Current - Continuous Drain (Id) at 25°C |
90A(Tc) |
90A(Tc) |
Drive voltage (maximum Rds On, minimum Rds On) |
4.5V,10V |
4.5V,10V |
Rds On (maximum value) when different Id, Vgs |
4.8 milliohms @ 60A, 10V |
5 milliohms @ 60A, 10V |
Vgs (th) (maximum value) when different Id |
2V @ 40µA |
2V @ 40µA |
Gate charge (Qg) at different Vgs (maximum value) |
25nC @ 5V |
25nC @ 5V |
Vgs (maximum value) |
±20V |
±20V |
Input capacitance (Ciss) at different Vds (maximum value) |
3200pF @ 15V |
3200pF @ 15V |
Power dissipation (maximum) |
94W(Tc) |
94W(Tc) |
Operating temperature |
-55°C ~ 175°C(TJ) |
-55°C ~ 175°C(TJ) |
Installation type |
surface mount |
Through hole |
Supplier device packaging |
PG-TO252-3 |
PG-TO251-3 |
Package/casing |
TO-252-3, DPak (2 leads + tab), SC-63 |
TO-251-3 stubbed lead, IPak |