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IPD05N03LB G

Description
MOSFET N-CH 30V 90A DPAK
Categorysemiconductor    Discrete semiconductor   
File Size390KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IPD05N03LB G Overview

MOSFET N-CH 30V 90A DPAK

IPD05N03LB G Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)30V
Current - Continuous Drain (Id) at 25°C90A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs4.8 milliohms @ 60A, 10V
Vgs (th) (maximum value) when different Id2V @ 40µA
Gate charge (Qg) at different Vgs (maximum value)25nC @ 5V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)3200pF @ 15V
FET function-
Power dissipation (maximum)94W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingPG-TO252-3
Package/casingTO-252-3, DPak (2 leads + tab), SC-63

IPD05N03LB G Related Products

IPD05N03LB G IPS05N03LB G
Description MOSFET N-CH 30V 90A DPAK MOSFET N-CH 30V 90A IPAK
FET type N channel N channel
technology MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) at 25°C 90A(Tc) 90A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 4.5V,10V 4.5V,10V
Rds On (maximum value) when different Id, Vgs 4.8 milliohms @ 60A, 10V 5 milliohms @ 60A, 10V
Vgs (th) (maximum value) when different Id 2V @ 40µA 2V @ 40µA
Gate charge (Qg) at different Vgs (maximum value) 25nC @ 5V 25nC @ 5V
Vgs (maximum value) ±20V ±20V
Input capacitance (Ciss) at different Vds (maximum value) 3200pF @ 15V 3200pF @ 15V
Power dissipation (maximum) 94W(Tc) 94W(Tc)
Operating temperature -55°C ~ 175°C(TJ) -55°C ~ 175°C(TJ)
Installation type surface mount Through hole
Supplier device packaging PG-TO252-3 PG-TO251-3
Package/casing TO-252-3, DPak (2 leads + tab), SC-63 TO-251-3 stubbed lead, IPak

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