MOSFET N-CH 30V 90A IPAK
| Parameter Name | Attribute value |
| FET type | N channel |
| technology | MOSFET (metal oxide) |
| Drain-source voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) at 25°C | 90A（Tc） |
| Drive voltage (maximum Rds On, minimum Rds On) | 4.5V，10V |
| Rds On (maximum value) when different Id, Vgs | 5 milliohms @ 60A, 10V |
| Vgs (th) (maximum value) when different Id | 2V @ 40µA |
| Gate charge (Qg) at different Vgs (maximum value) | 25nC @ 5V |
| Vgs (maximum value) | ±20V |
| Input capacitance (Ciss) at different Vds (maximum value) | 3200pF @ 15V |
| FET function | - |
| Power dissipation (maximum) | 94W（Tc） |
| Operating temperature | -55°C ~ 175°C（TJ） |
| Installation type | Through hole |
| Supplier device packaging | PG-TO251-3 |
| Package/casing | TO-251-3 stubbed lead, IPak |
| IPS05N03LB G | IPD05N03LB G | |
|---|---|---|
| Description | MOSFET N-CH 30V 90A IPAK | MOSFET N-CH 30V 90A DPAK |
| FET type | N channel | N channel |
| technology | MOSFET (metal oxide) | MOSFET (metal oxide) |
| Drain-source voltage (Vdss) | 30V | 30V |
| Current - Continuous Drain (Id) at 25°C | 90A（Tc） | 90A（Tc） |
| Drive voltage (maximum Rds On, minimum Rds On) | 4.5V，10V | 4.5V，10V |
| Rds On (maximum value) when different Id, Vgs | 5 milliohms @ 60A, 10V | 4.8 milliohms @ 60A, 10V |
| Vgs (th) (maximum value) when different Id | 2V @ 40µA | 2V @ 40µA |
| Gate charge (Qg) at different Vgs (maximum value) | 25nC @ 5V | 25nC @ 5V |
| Vgs (maximum value) | ±20V | ±20V |
| Input capacitance (Ciss) at different Vds (maximum value) | 3200pF @ 15V | 3200pF @ 15V |
| Power dissipation (maximum) | 94W（Tc） | 94W（Tc） |
| Operating temperature | -55°C ~ 175°C（TJ） | -55°C ~ 175°C（TJ） |
| Installation type | Through hole | surface mount |
| Supplier device packaging | PG-TO251-3 | PG-TO252-3 |
| Package/casing | TO-251-3 stubbed lead, IPak | TO-252-3, DPak (2 leads + tab), SC-63 |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD