TK17A80W,S4X datasheet, PDF - EEWORLD Datasheet

TK17A80W,S4X: DescriptionMOSFET N-CH 800V 17A TO220SIS; Categorysemiconductor Discrete semiconductor; File Size410KB，10 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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TK17A80W,S4X Overview

MOSFET N-CH 800V 17A TO220SIS

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	800V
Current - Continuous Drain (Id) at 25°C	17A（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	10V
Rds On (maximum value) when different Id, Vgs	290 milliohms @ 8.5A, 10V
Vgs (th) (maximum value) when different Id	4V @ 850µA
Gate charge (Qg) at different Vgs (maximum value)	32nC @ 10V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	2050pF @ 300V
FET function	-
Power dissipation (maximum)	45W（Tc）
Operating temperature	150°C
Installation type	Through hole
Supplier device packaging	TO-220SIS
Package/casing	TO-220-3 whole package

	TK17A80W,S4X	TK17A80W
Description	MOSFET N-CH 800V 17A TO220SIS	POWER, FET

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