MSRT10060(A)D datasheet, PDF - EEWORLD Datasheet

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MSRT10060(A)D: DescriptionDIODE GEN PURP 600V 100A 3 TOWER; Categorysemiconductor Discrete semiconductor; File Size402KB，3 Pages; ManufacturerGeneSiC; Websitehttp://www.genesicsemi.com/; Environmental Compliance

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MSRT10060(A)D Overview

DIODE GEN PURP 600V 100A 3 TOWER

MSRT10060(A)D Parametric

Parameter Name	Attribute value
Diode configuration	1 pair in series
Diode type	standard
Voltage - DC Reverse (Vr) (Maximum)	600V
Current - average rectification (Io) (per diode)	100A
Voltage at different If - Forward (Vf	1.1V @ 100A
speed	Standard recovery >500ns, >200mA (Io)
Current at different Vr - Reverse leakage current	10µA @ 600V
Operating Temperature - Junction	-55°C ~ 150°C
Installation type	Base installation
Package/casing	three towers
Supplier device packaging	three towers

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MSRT10060(A)D thru MSRT100100(A)D

Silicon Standard

Recovery Diode

Features

• High Surge Capability

• Types from 600 V to 1000 V V

RRM

• Isolation Type Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

Three Tower Package

V

RRM

= 600 V - 1000 V

I

F(AV)

= 100 A

MSRT100XXD

Maximum ratings, at T

j

= 25 °C, unless otherwise specified

Parameter

Repetitive p

p

peak reverse voltage

g

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

Symbol

V

RRM

V

RMS

V

DC

T

j

T

stg

Conditions

MSRT10060(A)D

600

424

600

-55 to 150

MSRT10080(A)D

800

566

800

-55 to 150

MSRT100100(A)D

1000

707

1000

-55 to 150

Unit

V

°C

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Average forward current (per

leg)

Peak forward surge current

(per leg)

Maximum instantaneous

forward voltage (per leg)

Maximum instantaneous

reverse current at rated DC

blocking voltage (per leg)

Symbol

I

F(AV)

I

FSM

V

F

I

R

Conditions

T

C

= 140 °C

t

p

= 8.3 ms, half sine

I

FM

= 100 A, T

j

= 25 °C

T

j

= 25 °C

T

j

= 150 °C

MSRT10060(A)D

100

2000

1.1

10

5

MSRT10080(A)D

100

2000

1.1

10

5

MSRT100100(A)D

100

2000

1.1

10

5

Unit

A

V

μA

mA

Thermal characteristics

Maximum thermal resistance,

junction - case (per leg)

R

Θjc

0.45

°C/W

Feb 2016

Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

1

MSRT10060(A)D Related Products

	MSRT10060(A)D	MSRT100100(A)D	MSRT10080(A)D
Description	DIODE GEN PURP 600V 100A 3 TOWER	DIODE GEN 1KV 100A 3 TOWER	DIODE GEN PURP 800V 100A 3 TOWER
Diode configuration	1 pair in series	1 pair in series	1 pair in series
Diode type	standard	standard	standard
Voltage - DC Reverse (Vr) (Maximum)	600V	1000V	800V
Current - average rectification (Io) (per diode)	100A	100A	100A
Voltage at different If - Forward (Vf	1.1V @ 100A	1.1V @ 100A	1.1V @ 100A
speed	Standard recovery >500ns, >200mA (Io)	Standard recovery >500ns, >200mA (Io)	Standard recovery >500ns, >200mA (Io)
Current at different Vr - Reverse leakage current	10µA @ 600V	10µA @ 1000V	10µA @ 800V
Operating Temperature - Junction	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C
Installation type	Base installation	Base installation	Base installation
Package/casing	three towers	three towers	three towers
Supplier device packaging	three towers	three towers	three towers

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