|
AOTF10T60 |
AOTF10T60L |
AOT10T60L |
Description |
MOSFET N-CH 600V 10A TO220F |
MOSFET N-CH 600V 10A TO220F |
MOSFET N-CH 600V 10A TO-220 |
FET type |
N channel |
N channel |
N channel |
technology |
MOSFET (metal oxide) |
MOSFET (metal oxide) |
MOSFET (metal oxide) |
Drain-source voltage (Vdss) |
600V |
600V |
600V |
Current - Continuous Drain (Id) at 25°C |
10A(Tc) |
10A(Tc) |
10A(Tc) |
Drive voltage (maximum Rds On, minimum Rds On) |
10V |
10V |
10V |
Rds On (maximum value) when different Id, Vgs |
700 milliohms @ 5A, 10V |
700 milliohms @ 5A, 10V |
700 milliohms @ 5A, 10V |
Vgs (th) (maximum value) when different Id |
5V @ 250µA |
5V @ 250µA |
5V @ 250µA |
Gate charge (Qg) at different Vgs (maximum value) |
35nC @ 10V |
35nC @ 10V |
35nC @ 10V |
Vgs (maximum value) |
±30V |
±30V |
±30V |
Input capacitance (Ciss) at different Vds (maximum value) |
1346pF @ 100V |
1346pF @ 100V |
1346pF @ 100V |
Power dissipation (maximum) |
43W(Tc) |
43W(Tc) |
208W(Tc) |
Operating temperature |
-55°C ~ 150°C(TJ) |
-55°C ~ 150°C(TJ) |
-55°C ~ 150°C(TJ) |
Installation type |
Through hole |
Through hole |
Through hole |
Supplier device packaging |
TO-220-3F |
TO-220-3F |
TO-220 |
Package/casing |
TO-220-3 whole package |
TO-220-3 whole package |
TO-220-3 |