120NQ.../R-1
Technical Data
Data Sheet N1155, Rev. A
120NQ035/R-1 120NQ040/R-1 120NQ045/R-1
SCHOTTKY RECTIFIER
Features
150℃ T
J
operation
Unique high power, Half-Pak module
Replaces three parallel DO-5’S
Easier to mount and lower profile than DO-5’S
High purity, high temperature epoxy encapsulation
for enhanced
mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
PRM1-1
Circuit Diagram
Applications
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
120NQ...-1
120NQ...R-1
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Forward Current
Peak One Cycle Non-Repetitive
Surge Current
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
E
AS
I
AR
Condition
-
50% duty cycle @T
C
=106°C,
rectangular wave form
8.3 ms, half Sine pulse
T
J
=25℃,I
AS
=12A,L=1.12mH
Current decaying linearly to zero in 1
μsec Frequency limited by T
J
max.
V
A
=1.5×V
R
typical
35
40
45
Max.
120NQ035(R)-1
120NQ040(R)-1
120NQ045(R)-1
120
1860
81
12
Units
V
A
A
mJ
A
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120NQ.../R-1
Technical Data
Data Sheet N1155, Rev. A
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Symbol
V
F1
V
F2
Reverse Current*
Threshold Voltage
Forward Slope Resistance
Junction Capacitance
Max. Voltage Rate of Change
* Pulse width < 300 µs, duty cycle < 2%
Condition
@ 120A, Pulse, T
J
= 25
C
@ 240A, Pulse, T
J
= 25
C
@ 120A, Pulse, T
J
= 125
C
@ 240A, Pulse, T
J
= 125
C
@V
R
= rated VR T
J
= 25
C
@V
R
= rated VR T
J
= 125
C
T
J
= T
J
max
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz
-
Typ.
0.58
-
0.50
-
0.2
150
-
-
4000
-
Max.
0.61
0.73
0.52
0.69
10
500
0.32
1.37
5200
10,000
Units
V
V
mA
mA
V
mΩ
pF
V/s
I
R1
I
R2
V
F(TO)
r
t
C
T
dv/dt
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance
Junction to Case
Typical Thermal Resistance, case
to Heat Sink
Mounting Torque
Approximate Weight
Case Style
Symbol
T
J
T
stg
R
JC
R
cs
DC operation
Mounting surface, smooth and
greased
Non-lubricated threads
-
Condition
-
-
Specification
-55 to +150
-55 to +150
0.40
0.15
Mounting
23(min)
Torque
29(max)
Terminal
35(min)
Torque
46(max)
25.6
Units
C
C
C/W
C/W
T
M
wt
Kg-cm
g
PRM1-1
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120NQ.../R-1
Technical Data
Data Sheet N1155, Rev. A
Ratings and Characteristics Curves
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120NQ.../R-1
Technical Data
Data Sheet N1155, Rev. A
Ordering Information
Device
120NQ SERIES
PRM1-1(Pb-Free)
Marking Diagram
27pcs/ box
Package
Shipping
Where XXXX is YYWW
1st row SS YYWW
2nd row 120NQ035-1
SS
= SS
YY
= Year
WW
= Week
Cautions：Molding
resin
Epoxy resin UL:94V-0
For information on tape and reel specifications, including part
orientation and tape sizes, please refer to our tape and reel
packaging specification.
Mechanical Dimensions PRM1-1 (Inches/Millimeters)
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120NQ.../R-1
Technical Data
Data Sheet N1155, Rev. A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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